Zhou Zhe, Wu Yueyue, Pan Keyuan, Zhu Duoyi, Li Zifan, Yan Shiqi, Xin Qian, Wang Qiye, Qian Xinkai, Xiu Fei, Huang Wei, Liu Juqing
Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China.
Shandong Technology Center of Nanodevices and Integration, School of Microelectronics, Shandong University, Jinan, 250100, China.
Light Sci Appl. 2024 Jul 23;13(1):175. doi: 10.1038/s41377-024-01519-w.
Crossbar resistive memory architectures enable high-capacity storage and neuromorphic computing, accurate retrieval of the stored information is a prerequisite during read operation. However, conventional electrical readout normally suffer from complicated process, inaccurate and destructive reading due to crosstalk effect from sneak path current. Here we report a memristive-photoconductive transduction (MPT) methodology for precise and nondestructive readout in a memristive crossbar array. The individual devices present dynamic filament form/fuse for resistance modulation under electric stimulation, which leads to photogenerated carrier transport for tunable photoconductive response under subsequently light pulse stimuli. This coherent signal transduction can be used to directly detect the memorized on/off states stored in each cell, and a prototype 4 * 4 crossbar memories has been constructed and validated for the fidelity of crosstalk-free readout in recall process.
交叉杆电阻式存储器架构实现了高容量存储和神经形态计算，在读取操作期间准确检索存储的信息是一个先决条件。然而，传统的电读出通常存在过程复杂、由于潜行路径电流的串扰效应导致读取不准确和具有破坏性等问题。在此，我们报告了一种用于在忆阻交叉杆阵列中进行精确且非破坏性读出的忆阻-光电导转换（MPT）方法。各个器件在电刺激下呈现用于电阻调制的动态细丝形式/熔丝，这导致在随后的光脉冲刺激下光生载流子传输以实现可调的光电导响应。这种相干信号转换可用于直接检测存储在每个单元中的记忆开/关状态，并且已经构建了一个4×4交叉杆存储器原型，并验证了其在召回过程中无串扰读出的保真度。
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