Sin Stanislav, Oh Saeroonter
Department of Electrical and Electronic Engineering, Hanyang University, Ansan, 15588, Korea.
Sci Rep. 2023 Sep 26;13(1):16084. doi: 10.1038/s41598-023-43378-2.
Spintronic devices are regarded as a promising solution for future computing and memory technologies. They are non-volatile, resilient to radiation, and compatible with the CMOS back-end process. However, the major drawbacks of modern current-driven spintronic devices are the long switching delay and relatively high power consumption. Recent progress in magnetoelectronics, particularly in voltage-controlled magnetism reveals a possible solution. Voltage-controlled magnetic anisotropy (VCMA) allows the manipulation of interface-mediated perpendicular anisotropy energy. However, most VCMA-based switching methods require pre-read operation, precise pulse-width control and have high write error rate. This study proposes a novel deterministic self-regulated precessional ferromagnet switching method, which overcomes these issues. In the discussed method, energy symmetry is broken by a dependence of MTJ resistance on the angle between magnetization vectors of free and pinned layers. Hence, the method does not require an external magnetic field and large electric current. The proposed method is verified through micromagnetic simulations and benchmarked with other methods typically reported in the literature. We report the write error rate is significantly improved compared to other VCMA switching methods. Moreover, the mean energy consumption is as low as 38.22 fJ and the mean switching delay is 3.77 ns.
自旋电子器件被视为未来计算和存储技术的一种有前途的解决方案。它们是非易失性的，抗辐射，并且与CMOS后端工艺兼容。然而，现代电流驱动自旋电子器件的主要缺点是开关延迟长和功耗相对较高。磁电子学的最新进展，特别是在压控磁性方面，揭示了一种可能的解决方案。压控磁各向异性（VCMA）允许对界面介导的垂直各向异性能量进行操纵。然而，大多数基于VCMA的开关方法需要预读操作、精确的脉冲宽度控制并且写入错误率高。本研究提出了一种新颖的确定性自调节进动铁磁体开关方法，该方法克服了这些问题。在所讨论的方法中，MTJ电阻对自由层和固定层磁化矢量之间夹角的依赖性打破了能量对称性。因此，该方法不需要外部磁场和大电流。通过微磁模拟验证了所提出的方法，并与文献中通常报道的其他方法进行了基准测试。我们报告说，与其他VCMA开关方法相比，写入错误率有了显著提高。此外，平均能耗低至38.22 fJ，平均开关延迟为3.77 ns。
