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衬底偏压对AISI 316L不锈钢上类金刚石碳膜结构的影响:分子动力学模拟研究

Effects of Substrate Bias Voltage on Structure of Diamond-Like Carbon Films on AISI 316L Stainless Steel: A Molecular Dynamics Simulation Study.

作者信息

Do Ngoc-Tu, Dinh Van-Hai, Lich Le Van, Dang-Thi Hong-Hue, Nguyen Trong-Giang

机构信息

Department of Industrial Equipment & Tools, Faculty of Mechanical Engineering, Hanoi University of Industry, Hanoi 100000, Vietnam.

School of Materials Science and Engineering, Hanoi University of Science and Technology, Hanoi 100000, Vietnam.

出版信息

Materials (Basel). 2021 Aug 30;14(17):4925. doi: 10.3390/ma14174925.

Abstract

With the recent significant advances in micro- and nanoscale fabrication techniques, deposition of diamond-like carbon films on stainless steel substrates has been experimentally achieved. However, the underlying mechanism for the formation of film microstructures has remained elusive. In this study, the growth processes of diamond-like carbon films on AISI 316L substrate are studied via the molecular dynamics method. Effects of substrate bias voltage on the structure properties and sp hybridization ratio are investigated. A diamond-like carbon film with a compact structure and smooth surface is obtained at 120 V bias voltage. Looser structures with high surface roughness are observed in films deposited under bias voltages of 0 V or 300 V. In addition, sp fraction increases with increasing substrate bias voltage from 0 V to 120 V, while an opposite trend is obtained when the bias voltage is further increased from 120 V to 300 V. The highest magnitude of sp fraction was about 48.5% at 120 V bias voltage. The dependence of sp fraction in carbon films on the substrate bias voltage achieves a high consistency within the experiment results. The mechanism for the dependence of diamond-like carbon structures on the substrate bias voltage is discussed as well.

摘要

随着微纳尺度制造技术近年来的重大进展,已通过实验在不锈钢基板上实现了类金刚石碳膜的沉积。然而,膜微观结构形成的潜在机制仍然难以捉摸。在本研究中,通过分子动力学方法研究了AISI 316L基板上类金刚石碳膜的生长过程。研究了基板偏置电压对结构性能和sp杂化比的影响。在120 V偏置电压下获得了具有致密结构和平滑表面的类金刚石碳膜。在0 V或300 V偏置电压下沉积的膜中观察到具有高表面粗糙度的较松散结构。此外,sp分数随着基板偏置电压从0 V增加到120 V而增加,而当偏置电压从120 V进一步增加到300 V时则得到相反的趋势。在120 V偏置电压下sp分数的最高值约为48.5%。碳膜中sp分数对基板偏置电压的依赖性在实验结果中实现了高度一致性。还讨论了类金刚石碳结构对基板偏置电压依赖性的机制。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4984/8434122/c66e929bf6a8/materials-14-04925-g001.jpg

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