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牺牲层辅助纳米级转移印刷

Sacrificial layer-assisted nanoscale transfer printing.

作者信息

Liu Junshan, Pang Bo, Xue Riye, Li Rui, Song Jinlong, Zhao Xiaojun, Wang Dazhi, Hu Xiaoguang, Lu Yao, Wang Liding

机构信息

Key Laboratory for Micro/Nano Technology and System of Liaoning Province, Dalian University of Technology, Dalian, Liaoning 116024 China.

Key Laboratory for Precision and Non-Traditional Machining Technology of the Ministry of Education, Dalian University of Technology, Dalian, Liaoning 116024 China.

出版信息

Microsyst Nanoeng. 2020 Sep 21;6:80. doi: 10.1038/s41378-020-00195-1. eCollection 2020.

Abstract

Transfer printing is an emerging assembly technique for flexible and stretchable electronics. Although a variety of transfer printing methods have been developed, transferring patterns with nanometer resolution remains challenging. We report a sacrificial layer-assisted nanoscale transfer printing method. A sacrificial layer is deposited on a donor substrate, and ink is prepared on and transferred with the sacrificial layer. Introducing the sacrificial layer into the transfer printing process eliminates the effect of the contact area on the energy release rate (ERR) and ensures that the ERR for the stamp/ink-sacrificial layer interface is greater than that for the sacrificial layer/donor interface even at a slow peel speed (5 mm s). Hence, large-area nanoscale patterns can be successfully transferred with a yield of 100%, such as Au nanoline arrays (100 nm thick, 4 mm long and 47 nm wide) fabricated by photolithography techniques and PZT nanowires (10 mm long and 63 nm wide) fabricated by electrohydrodynamic jet printing, using only a blank stamp and without the assistance of any interfacial chemistries. Moreover, the presence of the sacrificial layer also enables the ink to move close to the mechanical neutral plane of the multilayer peel-off sheet, remarkably decreasing the bending stress and obviating cracks or fractures in the ink during transfer printing.

摘要

转移印花是一种用于柔性和可拉伸电子产品的新兴组装技术。尽管已经开发出了多种转移印花方法,但转移具有纳米分辨率的图案仍然具有挑战性。我们报道了一种牺牲层辅助的纳米级转移印花方法。在供体基板上沉积一层牺牲层,并在牺牲层上制备油墨并随其转移。将牺牲层引入转移印花过程中消除了接触面积对能量释放率(ERR)的影响,并确保即使在缓慢剥离速度(5毫米/秒)下,压模/油墨-牺牲层界面的ERR也大于牺牲层/供体界面的ERR。因此,可以以100%的产率成功转移大面积纳米级图案,例如通过光刻技术制造的金纳米线阵列(100纳米厚、4毫米长和47纳米宽)以及通过电液动力喷射印刷制造的PZT纳米线(10毫米长和63纳米宽),仅使用空白压模且无需任何界面化学的辅助。此外,牺牲层的存在还使油墨能够靠近多层剥离片的机械中性平面移动,显著降低弯曲应力并避免转移印花过程中油墨出现裂纹或断裂。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4e80/8433480/b9ea584c92a3/41378_2020_195_Fig1_HTML.jpg

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