Banszerus Luca, Schmitz Michael, Engels Stephan, Dauber Jan, Oellers Martin, Haupt Federica, Watanabe Kenji, Taniguchi Takashi, Beschoten Bernd, Stampfer Christoph
JARA-FIT and 2nd Institute of Physics, RWTH Aachen University, 52074 Aachen, Germany.
JARA-FIT and 2nd Institute of Physics, RWTH Aachen University, 52074 Aachen, Germany. ; Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, 52425 Jülich, Germany.
Sci Adv. 2015 Jul 31;1(6):e1500222. doi: 10.1126/sciadv.1500222. eCollection 2015 Jul.
Graphene research has prospered impressively in the past few years, and promising applications such as high-frequency transistors, magnetic field sensors, and flexible optoelectronics are just waiting for a scalable and cost-efficient fabrication technology to produce high-mobility graphene. Although significant progress has been made in chemical vapor deposition (CVD) and epitaxial growth of graphene, the carrier mobility obtained with these techniques is still significantly lower than what is achieved using exfoliated graphene. We show that the quality of CVD-grown graphene depends critically on the used transfer process, and we report on an advanced transfer technique that allows both reusing the copper substrate of the CVD growth and making devices with mobilities as high as 350,000 cm(2) V(-1) s(-1), thus rivaling exfoliated graphene.
在过去几年中，石墨烯研究取得了令人瞩目的进展，诸如高频晶体管、磁场传感器和柔性光电子学等颇具前景的应用，正等待着一种可扩展且经济高效的制造技术来生产高迁移率的石墨烯。尽管在化学气相沉积（CVD）和石墨烯外延生长方面已取得重大进展，但通过这些技术获得的载流子迁移率仍显著低于使用剥离石墨烯所实现的迁移率。我们表明，CVD生长的石墨烯质量关键取决于所采用的转移工艺，并且我们报道了一种先进的转移技术，该技术既能重复使用CVD生长的铜衬底，又能制造出迁移率高达350,000 cm² V⁻¹ s⁻¹的器件，从而可与剥离石墨烯相媲美。
