Revealing the Brønsted-Evans-Polanyi relation in halide-activated fast MoS growth toward millimeter-sized 2D crystals.

Achieving large-size two-dimensional (2D) crystals is key to fully exploiting their remarkable functionalities and application potentials. Chemical vapor deposition growth of 2D semiconductors such as monolayer MoS has been reported to be activated by halide salts, for which various investigations have been conducted to understand the underlying mechanism from different aspects. Here, we provide experimental evidence showing that the MoS growth dynamics are halogen dependent through the Brønsted-Evans-Polanyi relation, based on which we build a growth model by considering MoS edge passivation by halogens, and theoretically reproduce the trend of our experimental observations. These mechanistic understandings enable us to further optimize the fast growth of MoS and reach record-large domain sizes that should facilitate practical applications.