Li Junye, Li Handong, Niu Xiaobin, Wang Zhiming
School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 610054, China.
Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China.
ACS Nano. 2021 Dec 28;15(12):18683-18707. doi: 10.1021/acsnano.1c03836. Epub 2021 Dec 6.
Nanostructured InSe compounds have been widely used in electronics, optoelectronics, and thermoelectrics. Recently, the revelation of ferroelectricity in low-dimensional (low-D) InSe has caused a new upsurge of scientific interest in nanostructured InSe and advanced functional devices. The ferroelectric, thermoelectric, and optoelectronic properties of InSe are highly correlated with the crystal structure. In this review, we summarize the crystal structures and electronic band structures of the widely interested members of the InSe compound family. Recent achievements in the preparation of low-D InSe with controlled phases are discussed in detail. General principles for obtaining pure-phased InSe nanostructures are described. The excellent ferroelectric, optoelectronic, and thermoelectric properties having been demonstrated using nanostructured and heterostructured InSe with different phases are also summarized. Progress and challenges on the applications of InSe nanostructures in nonvolatile memories, photodetectors, gas sensors, strain sensors, and photovoltaics are discussed in detail. In the last part of this review, perspectives on the challenges and opportunities in the preparation and applications of InSe materials are presented.
纳米结构的InSe化合物已广泛应用于电子学、光电子学和热电学领域。最近，低维（低D）InSe中铁电性的发现引发了对纳米结构InSe和先进功能器件的新一轮科学研究热潮。InSe的铁电、热电和光电特性与晶体结构高度相关。在这篇综述中，我们总结了InSe化合物家族中广受关注的成员的晶体结构和电子能带结构。详细讨论了具有可控相的低D InSe制备方面的最新成果。描述了获得纯相InSe纳米结构的一般原则。还总结了使用不同相的纳米结构和异质结构InSe所展示出的优异铁电、光电和热电特性。详细讨论了InSe纳米结构在非易失性存储器、光电探测器、气体传感器、应变传感器和光伏领域应用的进展与挑战。在本综述的最后部分，阐述了InSe材料制备和应用中面临的挑战与机遇的展望。
