Galante-Sempere David, Torres-Clarke Jeffrey, Del Pino Javier, Khemchandani Sunil Lalchand
Institute for Applied Microelectronics (IUMA), Universidad de Las Palmas de Gran Canaria, 35001 Las Palmas de Gran Canaria, Spain.
Sensors (Basel). 2024 Apr 21;24(8):2646. doi: 10.3390/s24082646.
This article presents the design of a low-power low noise amplifier (LNA) implemented in 45 nm silicon-on-insulator (SOI) technology using the gm/ID methodology. The Ka-band LNA achieves a very low power consumption of only 1.98 mW andis the first time the gm/ID approach is applied at such a high frequency. The circuit is suitable for Ka-band applications with a central frequency of 28 GHz, as the circuit is intended to operate in the n257 frequency band defined by the 3GPP 5G new radio (NR) specification. The proposed cascode LNA uses the gm/ID methodology in an RF/MW scenario to exploit the advantages of moderate inversion region operation. The circuit occupies a total area of 1.23 mm excluding pads and draws 1.98 mW from a DC supply of 0.9 V. Post-layout simulation results reveal a total gain of 11.4 dB, a noise figure (NF) of 3.8 dB, and an input return loss (IRL) better than 12 dB. Compared to conventional circuits, this design obtains a remarkable figure of merit (FoM) as the LNA reports a gain and NF in line with other approaches with very low power consumption.
本文介绍了一种采用跨导/漏极电流（gm/ID）方法、基于45纳米绝缘体上硅（SOI）技术实现的低功耗低噪声放大器（LNA）的设计。该Ka波段LNA实现了仅1.98毫瓦的极低功耗，并且是首次在如此高的频率下应用gm/ID方法。该电路适用于中心频率为28吉赫兹的Ka波段应用，因为该电路旨在在3GPP 5G新无线电（NR）规范定义的n257频段中运行。所提出的共源共栅LNA在射频/微波场景中采用gm/ID方法，以利用适度反型区域操作的优势。该电路不包括焊盘的总面积为1.23平方毫米，从0.9伏的直流电源汲取1.98毫瓦的功率。布局后仿真结果显示总增益为11.4分贝，噪声系数（NF）为3.8分贝，输入回波损耗（IRL）优于12分贝。与传统电路相比，该设计获得了显著的品质因数（FoM），因为该LNA的增益和NF与其他方法相当，但功耗非常低。
