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二维 Xene 薄片的褶皱。

Buckled two-dimensional Xene sheets.

机构信息

Laboratorio MDM, IMM-CNR, via C. Olivetti 2, Agrate Brianza I-20864, Italy.

Department of Chemistry and Biochemistry, The Ohio State University, Columbus, Ohio 43210, USA.

出版信息

Nat Mater. 2017 Feb;16(2):163-169. doi: 10.1038/nmat4802. Epub 2017 Jan 16.

Abstract

Silicene, germanene and stanene are part of a monoelemental class of two-dimensional (2D) crystals termed 2D-Xenes (X = Si, Ge, Sn and so on) which, together with their ligand-functionalized derivatives referred to as Xanes, are comprised of group IVA atoms arranged in a honeycomb lattice - similar to graphene but with varying degrees of buckling. Their electronic structure ranges from trivial insulators, to semiconductors with tunable gaps, to semi-metallic, depending on the substrate, chemical functionalization and strain. More than a dozen different topological insulator states are predicted to emerge, including the quantum spin Hall state at room temperature, which, if realized, would enable new classes of nanoelectronic and spintronic devices, such as the topological field-effect transistor. The electronic structure can be tuned, for example, by changing the group IVA element, the degree of spin-orbit coupling, the functionalization chemistry or the substrate, making the 2D-Xene systems promising multifunctional 2D materials for nanotechnology. This Perspective highlights the current state of the art and future opportunities in the manipulation and stability of these materials, their functions and applications, and novel device concepts.

摘要

硅烯、锗烯和锡烯是二维(2D)晶体中单元素类的一部分,称为 2D-Xenes(X=Si、Ge、Sn 等),它们与其配体功能化衍生物 Xanes 一起,由排列在蜂窝晶格中的 IVA 族原子组成——类似于石墨烯,但具有不同程度的弯曲。它们的电子结构范围从微不足道的绝缘体到具有可调带隙的半导体,再到半金属,具体取决于衬底、化学功能化和应变。预计会出现十几种不同的拓扑绝缘体状态,包括室温下的量子自旋霍尔态,如果实现,将能够实现新的纳米电子学和自旋电子学器件,如拓扑场效应晶体管。例如,通过改变 IVA 元素、自旋轨道耦合的程度、功能化化学或衬底,可以调整电子结构,使 2D-Xene 系统成为有前途的多功能 2D 纳米技术材料。本文重点介绍了这些材料的操纵和稳定性、它们的功能和应用以及新型器件概念的当前技术水平和未来机遇。

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