Shih Chen Wei, Chin Albert, Lu Chun Fu, Su Wei Fang
Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan.
Depatment of Materials Science &Engineering National Taiwan University, Taipei 10617, Taiwan.
Sci Rep. 2016 Jan 8;6:19023. doi: 10.1038/srep19023.
High mobility channel thin-film-transistor (TFT) is crucial for both display and future generation integrated circuit. We report a new metal-oxide TFT that has an ultra-thin 4.5 nm SnO2 thickness for both active channel and source-drain regions, very high 147 cm(2)/Vs field-effect mobility, high ION/IOFF of 2.3 × 10(7), small 110 mV/dec sub-threshold slope, and a low VD of 2.5 V for low power operation. This mobility is already better than chemical-vapor-deposition grown multi-layers MoS2 TFT. From first principle quantum-mechanical calculation, the high mobility TFT is due to strongly overlapped orbitals.
高迁移率沟道薄膜晶体管（TFT）对于显示器和下一代集成电路都至关重要。我们报道了一种新型金属氧化物TFT，其有源沟道和源漏区的SnO₂厚度均为超薄的4.5nm，场效应迁移率高达147cm²/Vs，开/关电流比高达2.3×10⁷，亚阈值斜率低至110mV/dec，且驱动电压低至2.5V，可实现低功耗运行。这种迁移率已经优于化学气相沉积生长的多层MoS₂ TFT。根据第一性原理量子力学计算，这种高迁移率TFT归因于强烈重叠的轨道。
