Tawfik Mohamed W, Sharaf Abdelhameed, Serry Mohamed
Department of Mechanical Engineering, American University in Cairo, New Cairo 11835, Egypt.
Department of Radiation Engineering, Egyptian Atomic Energy Authority, Cairo 11765, Egypt.
Nanomaterials (Basel). 2022 Jan 18;12(3):305. doi: 10.3390/nano12030305.
This paper proposes a new graphene gamma- and beta-radiation sensor with a backend RF ring oscillator transducer employed to convert the change in the graphene resistivity due to ionizing irradiation into a frequency output. The sensor consists of a CVD monolayer of graphene grown on a copper substrate, with an RF ring oscillator readout circuit in which the percentage change in frequency is captured versus the change in radiation dose. The novel integration of the RF oscillator transducer with the graphene monolayer results in high average sensitivity to gamma irradiation up to 3.82 kΩ/kGy, which corresponds to a percentage change in frequency of 7.86% kGy in response to cumulative gamma irradiation ranging from 0 to 1 kGy. The new approach helps to minimize background environmental effects (e.g., due to light and temperature), leading to an insignificant error in the output change in frequency of the order of 0.46% when operated in light versus dark conditions. The uncertainty in readings due to background light was analyzed, and the error in the resistance was found to be of the order of 1.34 Ω, which confirms the high stability and selectivity of the proposed sensor under different background effects. Furthermore, the evolution of the graphene's lattice defect density due to radiation was observed using Raman spectroscopy and SEM, indicating a lattice defect density of up to 1.780 × 10/cm at 1 kGy gamma radiation, confirming the increase in the graphene resistance and proving the graphene's sensitivity. In contrast, the graphene's defect density in response to beta radiation was 0.683 × 10/cm at 3 kGy beta radiation, which is significantly lower than the gamma effects. This can be attributed to the lower p-doping effect caused by beta irradiation in ambient conditions, compared with that caused by gamma irradiation. Morphological analysis was used to verify the evolution of the microstructural defects caused by ionizing irradiation. The proposed sensor monitors the low-to-medium cumulative range of ionizing radiations ranging from 0 to 1 kGy for gamma radiation and 0 to 9 kGy for beta radiation, with high resolution and selectivity, filling the research gap in the study of graphene-based radiation sensors at low-to-medium ionizing radiation doses. This range is essential for the pharmaceutical and food industries, as it spans the minimum range for affecting human health, causing cancer and DNA damage.
本文提出了一种新型石墨烯γ和β辐射传感器,其采用后端射频环形振荡器换能器,用于将电离辐射引起的石墨烯电阻率变化转换为频率输出。该传感器由生长在铜衬底上的化学气相沉积(CVD)单层石墨烯组成,带有一个射频环形振荡器读出电路,可捕获频率的百分比变化与辐射剂量变化的关系。射频振荡器换能器与石墨烯单层的新颖集成,使得对高达3.82 kΩ/kGy的γ辐射具有高平均灵敏度,这对应于在0至1 kGy的累积γ辐射下频率变化百分比为7.86%/kGy。这种新方法有助于将背景环境影响(如由于光和温度)降至最低,在明、暗条件下工作时,频率输出变化的误差微不足道,约为0.46%。分析了背景光导致的读数不确定性,发现电阻误差约为1.34 Ω,这证实了所提出传感器在不同背景影响下具有高稳定性和选择性。此外,使用拉曼光谱和扫描电子显微镜(SEM)观察了辐射导致的石墨烯晶格缺陷密度的演变,表明在1 kGy的γ辐射下,晶格缺陷密度高达1.780×10/cm,证实了石墨烯电阻的增加并证明了石墨烯的灵敏度。相比之下,在3 kGy的β辐射下,石墨烯对β辐射的缺陷密度为0.683×10/cm,明显低于γ辐射的影响。这可归因于在环境条件下,β辐射引起的p型掺杂效应低于γ辐射。形态分析用于验证电离辐射引起的微观结构缺陷的演变。所提出的传感器可监测0至1 kGy的γ辐射和0至9 kGy的β辐射的低至中等累积电离辐射范围,具有高分辨率和选择性,填补了低至中等电离辐射剂量下基于石墨烯的辐射传感器研究的空白。这个范围对制药和食品行业至关重要,因为它涵盖了影响人类健康、导致癌症和DNA损伤的最小范围。