Méndez-Camacho R, Cruz-Hernández E
Facultad de Ciencias, Universidad Autónoma de San Luis Potosí, Av. Chapultepec 1570, Privadas del Pedregal, 78295, San Luis Potosí, México.
Coordinación para la Innovación y Aplicación de la Ciencia y la Tecnología, Universidad Autónoma de San Luis Potosí, Sierra Leona 550, 78210, San Luis Potosí, México.
Sci Rep. 2022 Mar 16;12(1):4470. doi: 10.1038/s41598-022-08367-x.
Vertically aligned arrays are a frequent outcome in the nanowires synthesis by self-assembly techniques or in its subsequent processing. When these nanowires are close enough, quantum electron tunneling is expected between them. Then, because extended or localized electronic states can be established in the wires by tuning its electron density, the tunneling configuration between adjacent wires could be conveniently adjusted by an external gate. In this contribution, by considering the collective nature of electrons using a Yukawa-like effective potential, we explore the electron interaction between closely spaced, parallel nanowires while varying the electron density and geometrical parameters. We find that, at a low-density Wigner crystal regime, the tunneling can take place between adjacent localized states along and transversal to the wires axis, which in turn allows to create two- and three-dimensional electronic distributions with valuable potential applications.
垂直排列的阵列是通过自组装技术合成纳米线或其后续加工过程中的常见结果。当这些纳米线足够接近时,预计它们之间会发生量子电子隧穿。然后,由于可以通过调节其电子密度在纳米线中建立扩展或局域的电子态,相邻纳米线之间的隧穿构型可以通过外部栅极方便地调节。在本论文中,通过使用类汤川有效势考虑电子的集体性质,我们在改变电子密度和几何参数的同时,探索了紧密间隔的平行纳米线之间的电子相互作用。我们发现,在低密度的维格纳晶体区域,隧穿可以沿着纳米线轴及其横向在相邻的局域态之间发生,这反过来又允许创建具有重要潜在应用的二维和三维电子分布。