Zheng Jiyuan, Xue Xingjun, Ji Cheng, Yuan Yuan, Sun Keye, Rosenmann Daniel, Wang Lai, Wu Jiamin, Campbell Joe C, Guha Supratik
Pritzker School of Molecular Engineering, the University of Chicago, Chicago, IL, 60637, USA.
Beijing National Research Center for Information Science and Technology, Tsinghua University, Beijing, 100084, China.
Nat Commun. 2022 Mar 21;13(1):1517. doi: 10.1038/s41467-022-29195-7.
One of the most common approaches for quenching single-photon avalanche diodes is to use a passive resistor in series with it. A drawback of this approach has been the limited recovery speed of the single-photon avalanche diodes. High resistance is needed to quench the avalanche, leading to slower recharging of the single-photon avalanche diodes depletion capacitor. We address this issue by replacing a fixed quenching resistor with a bias-dependent adaptive resistive switch. Reversible generation of metallic conduction enables switching between low and high resistance states under unipolar bias. As an example, using a Pt/AlO/Ag resistor with a commercial silicon single-photon avalanche diodes, we demonstrate avalanche pulse widths as small as ~30 ns, 10× smaller than a passively quenched approach, thus significantly improving the single-photon avalanche diodes frequency response. The experimental results are consistent with a model where the adaptive resistor dynamically changes its resistance during discharging and recharging the single-photon avalanche diodes.
淬灭单光子雪崩二极管最常见的方法之一是使用与其串联的无源电阻器。这种方法的一个缺点是单光子雪崩二极管的恢复速度有限。淬灭雪崩需要高电阻，这导致单光子雪崩二极管耗尽电容的充电速度变慢。我们通过用偏置相关的自适应电阻开关取代固定淬灭电阻来解决这个问题。金属导电的可逆产生使得在单极偏置下能够在低电阻和高电阻状态之间切换。例如，使用带有商用硅单光子雪崩二极管的Pt/AlO/Ag电阻器，我们展示了小至约30 ns的雪崩脉冲宽度，比被动淬灭方法小10倍，从而显著提高了单光子雪崩二极管的频率响应。实验结果与一个模型一致，在该模型中，自适应电阻在单光子雪崩二极管放电和充电期间动态改变其电阻。
