Ko Eunjung
Korea Institute for Advanced Study, Seoul, 02455, Korea.
Sci Rep. 2022 Mar 24;12(1):5101. doi: 10.1038/s41598-022-08785-x.
Owing to unique fundamental physics and device applications, twisted moiré physics in two-dimensional (2D) van der Waals (vdW) layered magnetic materials has recently received particular attention. We investigate magnetic vdW FeGeTe (FGT)/CrGeTe (CGT) moiré heterobilayers with twist angles of 11° and 30° from first-principles. We show that the moiré heterobilayer is a ferromagnetic metal with an n-type CGT layer due to the dominant spin-majority electron transfer from the FGT layer to the CGT layer, regardless of various stacked structures. The spin-majority hybridized bands between Cr and Fe bands crossing the Fermi level are found regardless of stacking. The band alignment of the CGT layer depends on the effective potential difference at the interface. We show that an external electric field perpendicular to the in-plane direction modulates the interface dipole and band edges. Our study reveals a deeper understanding of the effects of stacking, spin alignment, spin transfer, and electrostatic gating on the 2D vdW magnetic metal/semiconductor heterostructure interface.
由于独特的基础物理学和器件应用，二维（2D）范德华（vdW）层状磁性材料中的扭曲莫尔物理学最近受到了特别关注。我们从第一性原理出发，研究了扭曲角为11°和30°的磁性vdW FeGeTe（FGT）/CrGeTe（CGT）莫尔异质双层。我们表明，无论各种堆叠结构如何，由于从FGT层到CGT层的主要自旋多数电子转移，莫尔异质双层是一种具有n型CGT层的铁磁金属。无论堆叠情况如何，都发现了跨越费米能级的Cr和Fe能带之间的自旋多数杂化能带。CGT层的能带排列取决于界面处的有效电位差。我们表明，垂直于面内方向的外部电场会调制界面偶极子和能带边缘。我们的研究揭示了对堆叠、自旋排列、自旋转移和静电门控对二维vdW磁性金属/半导体异质结构界面影响的更深入理解。
