Manjunath K, Saraswat A, Samrat D, Rao C N R
International Centre for Materials Science, New Chemistry Unit, School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur P. O., Bengaluru, 560064, India.
Chemphyschem. 2022 May 18;23(10):e202100910. doi: 10.1002/cphc.202100910. Epub 2022 Apr 20.
Ti O thin films have been prepared through atomic layer deposition and subjected to electrical resistivity measurements as a function of temperature. The as-prepared films were stable for up to three weeks. In Ti O thin films, the insulator-metal transition is observed at ∼80 K, with nearly 3-4 orders of magnitude change in resistivity. The anomalous increase in electrical resistivity in the films is in accordance with the two-band model. However, the energy interval between the bands depending on the crystallographic c/a ratio leads to a change in electrical resistivity as a function of temperature.
通过原子层沉积制备了二氧化钛薄膜，并对其进行了作为温度函数的电阻率测量。制备好的薄膜在长达三周的时间内是稳定的。在二氧化钛薄膜中，在约80K时观察到绝缘体-金属转变，电阻率变化近3-4个数量级。薄膜中电阻率的异常增加符合双带模型。然而，取决于晶体学c/a比的能带之间的能量间隔导致电阻率随温度变化。
