Department of Physics, School of Science, Jimei University, Xiamen 361021, China.
College of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, China.
Int J Mol Sci. 2022 Oct 26;23(21):12912. doi: 10.3390/ijms232112912.
Solution-grown indium oxide (InO) based thin-film transistors (TFTs) hold good prospects for emerging advanced electronics due to their excellent mobility, prominent transparency, and possibility of low-cost and scalable manufacturing; however, pristine InO TFTs suffer from poor switching characteristics due to intrinsic oxygen-vacancy-related defects and require external doping. According to Shanmugam's theory, among potential dopants, phosphorus (P) has a large dopant-oxygen bonding strength (E) and high Lewis acid strength (L) that would suppress oxygen-vacancy related defects and mitigate dopant-induced carrier scattering; however, P-doped InO (IPO) TFTs have not yet been demonstrated. Here, we report aqueous solution-grown crystalline IPO TFTs for the first time. It is suggested that the incorporation of P could effectively inhibit oxygen-vacancy-related defects while maintaining high mobility. This work experimentally demonstrates that dopant with high E and L is promising for emerging oxide TFTs.
溶液生长的氧化铟（InO）基薄膜晶体管（TFT）由于其出色的迁移率、突出的透明度以及低成本和可扩展制造的可能性，在新兴先进电子产品方面具有广阔的前景；然而，由于本征氧空位相关缺陷，原始 InO TFT 存在较差的开关特性，需要外部掺杂。根据 Shanmugam 的理论，在潜在的掺杂剂中，磷（P）具有较大的掺杂-氧键合强度（E）和高路易斯酸强度（L），可抑制氧空位相关缺陷并减轻掺杂诱导的载流子散射；然而，尚未报道 P 掺杂的 InO（IPO）TFT。在这里，我们首次报道了水溶液生长的结晶 IPO TFT。研究表明，掺入 P 可以有效地抑制氧空位相关缺陷，同时保持高迁移率。这项工作从实验上证明了具有高 E 和 L 的掺杂剂对于新兴的氧化物 TFT 是有前途的。
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