• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

用于薄膜晶体管的水诱导纳米级薄结晶铟镨氧化物沟道层

Water-Induced Nanometer-Thin Crystalline Indium-Praseodymium Oxide Channel Layers for Thin-Film Transistors.

作者信息

Xu Wangying, Xu Chuyu, Zhang Zhibo, Huang Weicheng, Lin Qiubao, Zhuo Shuangmu, Xu Fang, Liu Xinke, Zhu Deliang, Zhao Chun

机构信息

Department of Physics, School of Science, Jimei University, Xiamen 361021, China.

College of Materials Science and Engineering, Shenzhen University, Shenzhen 518000, China.

出版信息

Nanomaterials (Basel). 2022 Aug 22;12(16):2880. doi: 10.3390/nano12162880.

DOI:10.3390/nano12162880
PMID:36014745
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9415306/
Abstract

We report water-induced nanometer-thin crystalline indium praseodymium oxide (In-Pr-O) thin-film transistors (TFTs) for the first time. This aqueous route enables the formation of dense ultrathin (6 nm) In-Pr-O thin films with near-atomic smoothness (0.2 nm). The role of Pr doping is investigated by a battery of experimental techniques. It is revealed that as the Pr doping ratio increases from 0 to 10%, the oxygen vacancy-related defects could be greatly suppressed, leading to the improvement of TFT device characteristics and durability. The optimized In-Pr-O TFT demonstrates state-of-the-art electrical performance with mobility of 17.03 ± 1.19 cm/Vs and on/off current ratio of ~10 based on Si/SiO substrate. This achievement is due to the low electronegativity and standard electrode potential of Pr, the high bond strength of Pr-O, same bixbyite structure of PrO and InO, and In-Pr-O channel's nanometer-thin and ultrasmooth nature. Therefore, the designed In-Pr-O channel holds great promise for next-generation transistors.

摘要

我们首次报道了水诱导的纳米级超薄晶体氧化铟镨(In-Pr-O)薄膜晶体管(TFT)。这种水相合成方法能够制备出具有近原子级平整度(约0.2纳米)的致密超薄(约6纳米)In-Pr-O薄膜。通过一系列实验技术研究了Pr掺杂的作用。结果表明,随着Pr掺杂比例从0增加到10%,与氧空位相关的缺陷可得到极大抑制,从而使TFT器件的特性和耐久性得到改善。基于Si/SiO₂ 衬底,优化后的In-Pr-O TFT展现出了先进的电学性能,迁移率为17.03±1.19 cm²/V·s,开/关电流比约为10⁷。这一成果归因于Pr的低电负性和标准电极电位、Pr-O的高键强、Pr₂O₃和In₂O₃相同的方铁锰矿结构以及In-Pr-O沟道的纳米级超薄和超光滑特性。因此,所设计的In-Pr-O沟道在下一代晶体管方面具有巨大潜力。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bb1b/9415306/506c20b2a93a/nanomaterials-12-02880-g011.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bb1b/9415306/5e15dd8cb523/nanomaterials-12-02880-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bb1b/9415306/98853066c166/nanomaterials-12-02880-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bb1b/9415306/f7b9c0197b7e/nanomaterials-12-02880-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bb1b/9415306/8f3fb76fdb95/nanomaterials-12-02880-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bb1b/9415306/d4053838c256/nanomaterials-12-02880-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bb1b/9415306/51585f5336b4/nanomaterials-12-02880-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bb1b/9415306/31ffbe8bce63/nanomaterials-12-02880-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bb1b/9415306/e1a2cf4b1009/nanomaterials-12-02880-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bb1b/9415306/2a8992ec52f4/nanomaterials-12-02880-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bb1b/9415306/fbebe1f3f500/nanomaterials-12-02880-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bb1b/9415306/506c20b2a93a/nanomaterials-12-02880-g011.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bb1b/9415306/5e15dd8cb523/nanomaterials-12-02880-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bb1b/9415306/98853066c166/nanomaterials-12-02880-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bb1b/9415306/f7b9c0197b7e/nanomaterials-12-02880-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bb1b/9415306/8f3fb76fdb95/nanomaterials-12-02880-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bb1b/9415306/d4053838c256/nanomaterials-12-02880-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bb1b/9415306/51585f5336b4/nanomaterials-12-02880-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bb1b/9415306/31ffbe8bce63/nanomaterials-12-02880-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bb1b/9415306/e1a2cf4b1009/nanomaterials-12-02880-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bb1b/9415306/2a8992ec52f4/nanomaterials-12-02880-g009.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bb1b/9415306/fbebe1f3f500/nanomaterials-12-02880-g010.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bb1b/9415306/506c20b2a93a/nanomaterials-12-02880-g011.jpg

相似文献

1
Water-Induced Nanometer-Thin Crystalline Indium-Praseodymium Oxide Channel Layers for Thin-Film Transistors.用于薄膜晶体管的水诱导纳米级薄结晶铟镨氧化物沟道层
Nanomaterials (Basel). 2022 Aug 22;12(16):2880. doi: 10.3390/nano12162880.
2
Aqueous Solution-Processed Nanometer-Thin Crystalline Indium Ytterbium Oxide Thin-Film Transistors.水溶液法制备的纳米级氧化铟镱薄膜晶体管
Nanomaterials (Basel). 2022 Apr 5;12(7):1216. doi: 10.3390/nano12071216.
3
Water-Processed Ultrathin Crystalline Indium-Boron-Oxide Channel for High-Performance Thin-Film Transistor Applications.用于高性能薄膜晶体管应用的水热法制备超薄晶体铟硼氧化物沟道
Nanomaterials (Basel). 2022 Mar 29;12(7):1125. doi: 10.3390/nano12071125.
4
Aqueous Solution-Grown Crystalline Phosphorus Doped Indium Oxide for Thin-Film Transistors Applications.水溶液生长掺磷氧化铟晶体用于薄膜晶体管。
Int J Mol Sci. 2022 Oct 26;23(21):12912. doi: 10.3390/ijms232112912.
5
Atomically Thin Amorphous Indium-Oxide Semiconductor Film Developed Using a Solution Process for High-Performance Oxide Transistors.采用溶液法制备的用于高性能氧化物晶体管的原子级超薄非晶氧化铟半导体薄膜
Nanomaterials (Basel). 2023 Sep 16;13(18):2568. doi: 10.3390/nano13182568.
6
Trap-Assisted Enhanced Bias Illumination Stability of Oxide Thin Film Transistor by Praseodymium Doping.掺镨氧化物薄膜晶体管的陷阱辅助增强偏压稳定性
ACS Appl Mater Interfaces. 2019 Feb 6;11(5):5232-5239. doi: 10.1021/acsami.8b18329. Epub 2019 Jan 25.
7
The Mechanism of the Photostability Enhancement of Thin-Film Transistors Based on Solution-Processed Oxide Semiconductors Doped with Tetravalent Lanthanides.基于溶液法制备的掺杂四价镧系元素的氧化物半导体薄膜晶体管光稳定性增强的机理
Nanomaterials (Basel). 2022 Nov 4;12(21):3902. doi: 10.3390/nano12213902.
8
Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application.采用液体二甲基(N-乙氧基-2,2-二甲基丙酰胺基)铟通过等离子体增强原子层沉积低温生长氧化铟薄膜在高迁移率薄膜晶体管中的应用。
ACS Appl Mater Interfaces. 2016 Oct 12;8(40):26924-26931. doi: 10.1021/acsami.6b07332. Epub 2016 Sep 27.
9
Comparative Study of Atomic Layer Deposited Indium-Based Oxide Transistors with a Fermi Energy Level-Engineered Heterojunction Structure Channel through a Cation Combinatorial Approach.通过阳离子组合方法对具有费米能级工程异质结结构沟道的原子层沉积铟基氧化物晶体管的比较研究。
ACS Appl Mater Interfaces. 2022 Apr 27;14(16):18646-18661. doi: 10.1021/acsami.1c23889. Epub 2022 Apr 15.
10
Synergistic approach to high-performance oxide thin film transistors using a bilayer channel architecture.采用双层沟道结构的高性能氧化物薄膜晶体管协同方法。
ACS Appl Mater Interfaces. 2013 Aug 28;5(16):7983-8. doi: 10.1021/am402065k. Epub 2013 Aug 7.

引用本文的文献

1
Distinctive Electric Properties of Group 14 Oxides: SiO, SiO, and SnO.第 14 族氧化物的独特电学性质:SiO、SiO₂ 和 SnO。
Int J Mol Sci. 2023 Nov 5;24(21):15985. doi: 10.3390/ijms242115985.

本文引用的文献

1
Nanometre-thin indium tin oxide for advanced high-performance electronics.用于先进高性能电子设备的纳米级超薄氧化铟锡
Nat Mater. 2019 Oct;18(10):1091-1097. doi: 10.1038/s41563-019-0455-8. Epub 2019 Aug 12.
2
Humidity-Independent Gas Sensors Using Pr-Doped InO Macroporous Spheres: Role of Cyclic Pr/Pr Redox Reactions in Suppression of Water-Poisoning Effect.使用掺镨氧化铟大孔球体的湿度无关型气体传感器:循环Pr/Pr氧化还原反应在抑制水中毒效应中的作用
ACS Appl Mater Interfaces. 2019 Jul 17;11(28):25322-25329. doi: 10.1021/acsami.9b06386. Epub 2019 Jul 3.
3
Solution-processed metal-oxide thin-film transistors: a review of recent developments.
溶液处理金属氧化物薄膜晶体管:近期发展综述。
Nanotechnology. 2019 Aug 2;30(31):312001. doi: 10.1088/1361-6528/ab1860. Epub 2019 Apr 11.
4
Synergistic Boron Doping of Semiconductor and Dielectric Layers for High-Performance Metal Oxide Transistors: Interplay of Experiment and Theory.用于高性能金属氧化物晶体管的半导体和介电层的协同硼掺杂:实验与理论的相互作用
J Am Chem Soc. 2018 Oct 3;140(39):12501-12510. doi: 10.1021/jacs.8b06395. Epub 2018 Sep 19.
5
Recent Advances of Solution-Processed Metal Oxide Thin-Film Transistors.溶液处理金属氧化物薄膜晶体管的最新进展。
ACS Appl Mater Interfaces. 2018 Aug 8;10(31):25878-25901. doi: 10.1021/acsami.7b16010. Epub 2018 Mar 29.
6
Metal oxides for optoelectronic applications.用于光电子应用的金属氧化物。
Nat Mater. 2016 Apr;15(4):383-96. doi: 10.1038/nmat4599.
7
Spray-combustion synthesis: efficient solution route to high-performance oxide transistors.喷雾燃烧合成法:通往高性能氧化物晶体管的高效解决方案途径。
Proc Natl Acad Sci U S A. 2015 Mar 17;112(11):3217-22. doi: 10.1073/pnas.1501548112. Epub 2015 Mar 2.
8
Facile and environmentally friendly solution-processed aluminum oxide dielectric for low-temperature, high-performance oxide thin-film transistors.用于低温、高性能氧化物薄膜晶体管的简便且环保的溶液处理氧化铝电介质。
ACS Appl Mater Interfaces. 2015 Mar 18;7(10):5803-10. doi: 10.1021/am508775c. Epub 2015 Mar 3.
9
Oxygen "getter" effects on microstructure and carrier transport in low temperature combustion-processed a-InXZnO (X = Ga, Sc, Y, La) transistors.低温燃烧法制备的 InXZnO(X = Ga、Sc、Y、La)晶体管中氧“清除剂”对微结构和载流子输运的影响。
J Am Chem Soc. 2013 Jul 24;135(29):10729-41. doi: 10.1021/ja403586x. Epub 2013 Jul 15.
10
Solution-processable metal oxide semiconductors for thin-film transistor applications.用于薄膜晶体管应用的溶液处理金属氧化物半导体。
Chem Soc Rev. 2013 Aug 21;42(16):6910-23. doi: 10.1039/c3cs35402d.