Babu N Sajid, Khadar M Abdul
Department of Nanoscience and Nanotechnology, University of Kerala Kariavattom Thiruvananthapuram 695 581 Kerala India
RSC Adv. 2020 Mar 2;10(15):8842-8852. doi: 10.1039/c9ra10251e. eCollection 2020 Feb 27.
The use of nanocrystals as materials for potential technological applications depends on tailoring their properties through intentional doping with external impurities. We have used a new technique to synthesize nanocrystal thin films of CdSe:CuSe containing different weight percentages (wt%) of CuSe. The films were deposited on glass substrates at room temperature by co-evaporation of CdSe and CuSe powder in nitrogen gas at a pressure larger than that required for conventional thin film deposition. The films consisted of nanograins of CdSe doped with CuSe (, nanograins of Cd CuSe where is the atom% of CuSe doped into CdSe) for lower wt% of CuSe, and nanocomposites of Cd CuSe and CuSe for higher wt% of CuSe. An energy band diagram built using the Anderson model was used for discussing the heterojunction characteristics of the junction between nanograins of Cd CuSe and CuSe. To investigate the usefulness of the nanocrystal thin films of CdSe:CuSe for practical applications, the - characteristics of p-p and p-n hetero-junctions formed by the films respectively with nanostructured films of similarly deposited CuSe and CdSe films were studied.
将纳米晶体用作潜在技术应用的材料，取决于通过有意掺杂外部杂质来调整其性能。我们采用了一种新技术来合成含有不同重量百分比（wt%）硒化铜（CuSe）的硒化镉（CdSe）：硒化铜（CdSe:CuSe）纳米晶体薄膜。通过在高于传统薄膜沉积所需压力的氮气中，共蒸发CdSe和CuSe粉末，在室温下将薄膜沉积在玻璃基板上。对于较低wt%的CuSe，薄膜由掺杂有CuSe的CdSe纳米颗粒（，其中是掺杂到CdSe中的CuSe的原子百分比）组成，而对于较高wt%的CuSe，薄膜由CdCuSe和CuSe的纳米复合材料组成。使用安德森模型构建的能带图用于讨论CdCuSe和CuSe纳米颗粒之间结的异质结特性。为了研究CdSe:CuSe纳米晶体薄膜在实际应用中的实用性，分别研究了该薄膜与类似沉积的CuSe和CdSe薄膜的纳米结构薄膜形成的p-p和p-n异质结的-特性。
