Sahithi A, Sumithra K
Birla Institute of Technology and Science (BITS), Pilani Hyderabad Campus Shamirpet Telangana state 500078 India
RSC Adv. 2020 Nov 20;10(69):42318-42326. doi: 10.1039/d0ra06760a. eCollection 2020 Nov 17.
We have studied the electronic structure and adsorption characteristics of environmentally potent gaseous molecules like carbon monoxide (CO) and ammonia (NH) on chemically modified surfaces of graphene, employing density functional methods. An insight into the changes made in the electronic band structure due to intrinsic and extrinsic doping and through a combined effect of both is discussed. With this regard, the adsorption of these gaseous moieties is investigated on substitutionally p- and n- doped graphene surfaces, doped with various mole fractions and having different configurational patterns on the surface. Even though the electronic properties are modified with various mole fractions of doping they do not show a methodical increase with the increase in the dopant concentration. This is attributed to the sub-lattice induced symmetry breaking for the dopant configurations where equivalent lattice sites are occupied on the surface. An appreciable band gap opening of around 0.63 eV is observed on doping, due to sub-lattice symmetry breaking. This is further improved on molecular doping, with CO and NH, where an increase up to 0.83 eV is noted with adsorption of ammonia. While both the molecules are physisorbed on nitrogen doped surfaces, carbon monoxide is strongly physisorbed and ammonia molecules are chemisorbed on a few boron doped surfaces resulting in notable changes in the adsorption energy. Therefore, it is clear that changes in the transport properties can be brought about by adsorption of these molecules on such surfaces and this study clearly indicates the invaluable prospects of such doped surfaces as potential sensors for these molecules.
我们采用密度泛函方法研究了环境中具有潜在影响的气态分子,如一氧化碳(CO)和氨(NH)在化学修饰的石墨烯表面的电子结构和吸附特性。讨论了由于本征和非本征掺杂以及两者的综合作用而导致的电子能带结构变化。就此而言,研究了这些气态部分在替代型p型和n型掺杂石墨烯表面上的吸附情况,这些表面掺杂了不同的摩尔分数且具有不同的表面构型模式。尽管电子性质随不同摩尔分数的掺杂而改变,但它们并未随着掺杂剂浓度的增加而呈现出有规律的增加。这归因于掺杂构型的亚晶格诱导对称性破缺,其中表面上的等效晶格位点被占据。由于亚晶格对称性破缺,掺杂时观察到约0.63 eV的明显带隙打开。在分子掺杂(CO和NH)时,这种情况进一步改善,吸附氨时带隙增加到0.83 eV。虽然这两种分子在氮掺杂表面上都是物理吸附,但一氧化碳在一些硼掺杂表面上是强物理吸附,而氨分子在这些表面上是化学吸附,导致吸附能发生显著变化。因此,很明显,这些分子在这类表面上的吸附可以引起传输性质的变化,并且这项研究清楚地表明了这类掺杂表面作为这些分子潜在传感器的宝贵前景。