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基于MoS-ZnO异质结构的高效灵活光电探测器。

Highly efficient and flexible photodetector based on MoS-ZnO heterostructures.

作者信息

Kang Min-A, Kim Seongjun, Jeon In-Su, Lim Yi Rang, Park Chong-Yun, Song Wooseok, Lee Sun Sook, Lim Jongsun, An Ki-Seok, Myung Sung

机构信息

Thin Film Materials Research Center, Korea Research Institute of Chemical Technology Daejeon 305-600 Republic of Korea

Department of Physics, Sungkyunkwan University Suwon Gyeonggi-do 440-746 Republic of Korea.

出版信息

RSC Adv. 2019 Jun 25;9(34):19707-19711. doi: 10.1039/c9ra00578a. eCollection 2019 Jun 19.

Abstract

Two-dimensional (2D) transition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS) and tungsten diselenide (WSe), have recently attracted attention for their applicability as building blocks for fabricating advanced functional materials. In this study, a high quality hybrid material based on 2D TMD nanosheets and ZnO nanopatches was demonstrated. An organic promoter layer was employed for the large-scale growth of the TMD sheet, and atomic layer deposition (ALD) was utilized for the growth of ZnO nanopatches. Photodetectors based on 2D TMD nanosheets and ZnO nanopatches were successfully fabricated and investigated, which showed a high photoresponsivity of 2.7 A/W. Our novel approach is a promising and effective method for the fabrication of photodetectors with a new structure for application in TMD-based transparent and flexible optoelectronic devices.

摘要

二维(2D)过渡金属二硫属化物(TMDs),如二硫化钼(MoS)和二硒化钨(WSe),最近因其作为制造先进功能材料的基础材料的适用性而受到关注。在本研究中,展示了一种基于二维TMD纳米片和ZnO纳米片的高质量混合材料。采用有机促进层实现TMD片的大规模生长,并利用原子层沉积(ALD)法生长ZnO纳米片。成功制备并研究了基于二维TMD纳米片和ZnO纳米片的光电探测器,其显示出2.7 A/W的高光响应率。我们的新方法是一种有前景且有效的方法,可用于制造具有新结构的光电探测器,以应用于基于TMD的透明和柔性光电器件。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/ae12/9065380/44102e583a77/c9ra00578a-f1.jpg

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