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单层二硫化钼中设计缺陷的量化

Quantification of defects engineered in single layer MoS.

作者信息

Aryeetey Frederick, Ignatova Tetyana, Aravamudhan Shyam

机构信息

Department of Nanoengineering, North Carolina A&T State University 2907 East Gate City Blvd Greensboro North Carolina 27401 USA

Department of Nanoscience, University of North Carolina at Greensboro 2907 East Gate City Blvd Greensboro North Carolina 27401 USA

出版信息

RSC Adv. 2020 Jun 16;10(39):22996-23001. doi: 10.1039/d0ra03372c.

Abstract

Atomic defects are controllably introduced in suspended single layer molybdenum disulfide (1L MoS) using helium ion beam. Vacancies exhibit one missing atom of molybdenum and a few atoms of sulfur. Quantification was done using a Scanning Transmission Electron Microscope (STEM) with an annular detector. Experimentally accessible inter-defect distance was employed to measure the degree of crystallinity in 1L MoS. A correlation between the appearance of an acoustic phonon mode in the Raman spectra and the inter-defect distance was established, which introduces a new methodology for quantifying defects in two-dimensional materials such as MoS.

摘要

利用氦离子束在悬浮的单层二硫化钼(1L MoS)中可控地引入原子缺陷。空位表现为一个钼原子和几个硫原子缺失。使用配备环形探测器的扫描透射电子显微镜(STEM)进行定量分析。利用实验可获取的缺陷间距离来测量1L MoS中的结晶度。在拉曼光谱中声子模式的出现与缺陷间距离之间建立了相关性,这为量化诸如MoS等二维材料中的缺陷引入了一种新方法。

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