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用于丝网印刷应用的半导体 Cu(In,Ga)Se 纳米颗粒的大规模合成。

Large-Scale Synthesis of Semiconducting Cu(In,Ga)Se Nanoparticles for Screen Printing Application.

作者信息

Gonçalves Bruna F, LaGrow Alec P, Pyrlin Sergey, Owens-Baird Bryan, Botelho Gabriela, Marques Luis S A, Ramos Marta M D, Kovnir Kirill, Lanceros-Mendez Senentxu, Kolen'ko Yury V

机构信息

International Iberian Nanotechnology Laboratory, 4715-330 Braga, Portugal.

Center of Physics, University of Minho, 4710-057 Braga, Portugal.

出版信息

Nanomaterials (Basel). 2021 Apr 28;11(5):1148. doi: 10.3390/nano11051148.

Abstract

During the last few decades, the interest over chalcopyrite and related photovoltaics has been growing due the outstanding structural and electrical properties of the thin-film Cu(In,Ga)Se photoabsorber. More recently, thin film deposition through solution processing has gained increasing attention from the industry, due to the potential low-cost and high-throughput production. To this end, the elimination of the selenization procedure in the synthesis of Cu(In,Ga)Se nanoparticles with following dispersion into ink formulations for printing/coating deposition processes are of high relevance. However, most of the reported syntheses procedures give access to tetragonal chalcopyrite Cu(In,Ga)Se nanoparticles, whereas methods to obtain other structures are scarce. Herein, we report a large-scale synthesis of high-quality Cu(In,Ga)Se nanoparticles with wurtzite hexagonal structure, with sizes of 10-70 nm, wide absorption in visible to near-infrared regions, and [Cu]/[In + Ga] ≈ 0.8 and [Ga]/[Ga + In] ≈ 0.3 metal ratios. The inclusion of the synthesized NPs into a water-based ink formulation for screen printing deposition results in thin films with homogenous thickness of ≈4.5 µm, paving the way towards environmentally friendly roll-to-roll production of photovoltaic systems.

摘要

在过去几十年中,由于薄膜Cu(In,Ga)Se光吸收体出色的结构和电学性能,人们对黄铜矿及相关光伏材料的兴趣与日俱增。最近,通过溶液处理进行薄膜沉积因其潜在的低成本和高通量生产而受到业界越来越多的关注。为此,在合成Cu(In,Ga)Se纳米颗粒并随后将其分散到用于印刷/涂层沉积工艺的油墨配方中时,消除硒化步骤具有高度相关性。然而,大多数已报道的合成方法只能得到四方晶系黄铜矿Cu(In,Ga)Se纳米颗粒,而获得其他结构的方法却很少。在此,我们报告了一种大规模合成高质量纤锌矿六方结构Cu(In,Ga)Se纳米颗粒的方法,其尺寸为10 - 70 nm,在可见光到近红外区域有广泛吸收,且金属比[Cu]/[In + Ga]≈0.8和[Ga]/[Ga + In]≈0.3。将合成的纳米颗粒加入用于丝网印刷沉积的水基油墨配方中,可得到厚度约为4.5 µm的均匀薄膜,为光伏系统的环保卷对卷生产铺平了道路。

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