Wang Weihao, Pan Xinhua, Peng Xiaoli, Lu Qiaoqi, Wang Fengzhi, Dai Wen, Lu Bin, Ye Zhizhen
State Key Laboratory of Silicon Materials, Cyrus Tang Center for Sensor Materials and Applications, School of Materials Science and Engineering, Zhejiang University Hangzhou 310027 People's Republic of China
RSC Adv. 2018 Feb 22;8(15):8349-8354. doi: 10.1039/c7ra12642e. eCollection 2018 Feb 19.
High mobility and p-type thin film transistors (TFTs) are in urgent need for high-speed electronic devices. In this work, ZnO quantum dot (QD)/Ag nanowire (NW) channel TFTs were fabricated by a solution processed method. The Ag NWs play the dual role of dopant and providing the charge transfer route, which make the channel p-type and enhance its mobility, respectively. The best sample yields an on/off ratio ( / ) of 5.04 × 10, a threshold voltage ( ) of 0.73 V, a high field effect mobility ( ) of 8.69 cm V s, and a subthreshold swing (SS) of 0.41 V dec. Owing to the strong ultraviolet (UV) absorption and photo-induced carrier separation ability of ZnO QDs and the fast carrier transport of Ag NWs, the devices acquire a high external quantum efficiency (EQE) and ultra-fast response under 365 nm UV illumination. The UV-modulated ZnO QD/Ag NW hybrid channel photo TFTs have potential for future application in optoelectronic devices, such as photodetectors and photoswitches.
高迁移率和p型薄膜晶体管（TFT）对于高速电子器件来说是迫切需要的。在这项工作中，通过溶液处理方法制备了ZnO量子点（QD）/Ag纳米线（NW）沟道TFT。Ag纳米线起到掺杂剂和提供电荷转移路径的双重作用，分别使沟道成为p型并提高其迁移率。最佳样品的开/关比（Ion/Ioff）为5.04×10，阈值电压（Vth）为0.73 V，高场效应迁移率（μFE）为8.69 cm² V⁻¹ s⁻¹，亚阈值摆幅（SS）为0.41 V dec⁻¹。由于ZnO量子点具有强紫外（UV）吸收和光致载流子分离能力以及Ag纳米线的快速载流子传输，这些器件在365 nm紫外光照下具有高的外量子效率（EQE）和超快响应。紫外调制的ZnO量子点/Ag纳米线混合沟道光TFT在光电器件如光电探测器和光开关等方面具有未来应用潜力。
