Facile synthesis of AgBiS nanocrystals for high responsivity infrared detectors.

AgBiS nanocrystals are emerging optoelectronic materials due to their solution-processability, earth abundance and non-toxic properties. We report a facile method to prepare AgBiS nanocrystals in ambient conditions. The nanocrystals are of high crystallinity and without byproducts, which make them suitable for solution processable optoelectronic devices. They were incorporated into graphene transistors for their near infrared detection application. Photodetectors with a high photo-responsivity of 10 A W for 895 nm wavelength at a low operation voltage of 0.1 V were demonstrated.