用于高响应度红外探测器的AgBiS纳米晶体的简易合成

Facile synthesis of AgBiS nanocrystals for high responsivity infrared detectors.

作者信息

Mak Chun Hin, Qian Jiasheng, Rogée Lukas, Lai Wai Kin, Lau Shu Ping

机构信息

Department of Applied Physics, The Hong Kong Polytechnic University Hung Hom Kowloon Hong Kong SAR

出版信息

RSC Adv. 2018 Nov 23;8(68):39203-39207. doi: 10.1039/c8ra08509a. eCollection 2018 Nov 16.

DOI:10.1039/c8ra08509a

PMID:35558304

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9090714/

Abstract

AgBiS nanocrystals are emerging optoelectronic materials due to their solution-processability, earth abundance and non-toxic properties. We report a facile method to prepare AgBiS nanocrystals in ambient conditions. The nanocrystals are of high crystallinity and without byproducts, which make them suitable for solution processable optoelectronic devices. They were incorporated into graphene transistors for their near infrared detection application. Photodetectors with a high photo-responsivity of 10 A W for 895 nm wavelength at a low operation voltage of 0.1 V were demonstrated.

摘要

由于其溶液可加工性、地球元素丰富性和无毒特性，AgBiS纳米晶体正成为新兴的光电子材料。我们报道了一种在环境条件下制备AgBiS纳米晶体的简便方法。这些纳米晶体具有高结晶度且无副产物，这使其适用于溶液可加工的光电器件。它们被集成到石墨烯晶体管中用于近红外探测应用。展示了在0.1 V的低工作电压下，对于895 nm波长具有10 A W的高光响应率的光电探测器。