Qu Yongfeng, Deng Ningkang, Yuan Yuan, Hu Wenbo, Liu Hongxia, Wu Shengli, Wang Hongxing
Key Laboratory for Physical Electronics and Devices of the Ministry of Education, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an 710049, China.
Science and Technology on Low-Light-Level Night Vision Laboratory, Xi'an 710065, China.
Materials (Basel). 2022 May 27;15(11):3818. doi: 10.3390/ma15113818.
The electrical and thermal characteristics of AlGaN/GaN high-electron mobility transistor (HEMT) devices with a dual-metal gate (DMG) structure are investigated by electrothermal simulation and compared with those of conventional single-metal gate (SMG) structure devices. The simulations reveal that the DMG structure devices have a 10-percent higher transconductance than the SMG structure devices when the self-heating effect is considered. In the meantime, employing the DMG structure, a decrease of more than 11% in the maximum temperature rise of the devices can be achieved at the power density of 6 W/mm. Furthermore, the peak in heat generation distribution at the gate edge of the devices is reduced using this structure. These results could be attributed to the change in the electric field distribution at the gate region and the suppression of the self-heating effect. Therefore, the electrical and thermal performances of AlGaN/GaN HEMT devices are improved by adopting the DMG structure.
