Chen Jiewei, Zhang Ting, Wang Jingli, Xu Lin, Lin Ziyuan, Liu Jidong, Wang Cong, Zhang Ning, Lau Shu Ping, Zhang Wenjing, Chhowalla Manish, Chai Yang
Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China.
The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, China.
Sci Adv. 2022 Jun 10;8(23):eabn3837. doi: 10.1126/sciadv.abn3837.
Modern electronics demand transistors with extremely high performance and energy efficiency. Charge-based transistors with conventional semiconductors experience substantial heat dissipation because of carrier scattering. Here, we demonstrate low-loss topological phase change transistors (TPCTs) based on tellurium, a Weyl semiconductor. By modulating the energy separation between the Fermi level and the Weyl point of tellurium through electrostatic gate modulation, the device exhibits topological phase change between Weyl (Chern number ≠ 0) and conventional (Chern number = 0) semiconductors. In the Weyl ON state, the device has low-loss transport characteristics due to the global topology of gauge fields against external perturbations; the OFF state exhibits trivial charge transport in the conventional phase by moving the Fermi level into the bandgap. The TPCTs show a high ON/OFF ratio (10) at low operation voltage (≤2 volts) and high ON-state conductance (39 mS/μm). Our studies provide alternative strategies for realizing ultralow power electronics.
现代电子学需要具有极高性能和能源效率的晶体管。基于传统半导体的电荷晶体管由于载流子散射会产生大量热耗散。在此，我们展示了基于外尔半导体碲的低损耗拓扑相变晶体管（TPCT）。通过静电栅极调制来调节碲的费米能级与外尔点之间的能量间距，该器件展现出在外尔（陈数≠0）半导体和传统（陈数 = 0）半导体之间的拓扑相变。在外尔导通状态下，由于规范场的全局拓扑结构对外部扰动具有抗性，该器件具有低损耗传输特性；通过将费米能级移入带隙，关断状态在传统相中表现出平凡的电荷传输。TPCT在低工作电压（≤2伏）下显示出高开关比（10）和高导通态电导（39 mS/μm）。我们的研究为实现超低功耗电子学提供了替代策略。
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