定制取向碲纳米带阵列的外延生长。

Tailoring the epitaxial growth of oriented Te nanoribbon arrays.

作者信息

Li Jie, Zhang Junrong, Chu Junwei, Yang Liu, Zhao Xinxin, Zhang Yan, Liu Tong, Lu Yang, Chen Cheng, Hou Xingang, Fang Long, Xu Yijun, Wang Junyong, Zhang Kai

机构信息

CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China.

School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China.

出版信息

iScience. 2023 Feb 10;26(3):106177. doi: 10.1016/j.isci.2023.106177. eCollection 2023 Mar 17.

DOI:10.1016/j.isci.2023.106177

PMID:36895655

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9988655/

Abstract

As an elemental semiconductor, tellurium (Te) has been famous for its high hole-mobility, excellent ambient stability and topological states. Here, we realize the controllable synthesis of horizontal Te nanoribbon arrays (TRAs) with an angular interval of 60°on mica substrates by physical vapor deposition strategy. The growth of Te nanoribbons (TRs) is driven by two factors, where the intrinsic quasi-one-dimensional spiral chain structure promotes the elongation of their length; the epitaxy relationship between [110] direction of Te and [110] direction of mica facilitates the oriented growth and the expansion of their width. The bending of TRs which have not been reported is induced by grain boundary. Field-effect transistors based on TRs demonstrate high mobility and on/off ratio corresponding to 397 cm V s and 1.5×10, respectively. These phenomena supply an opportunity to deep insight into the vapor-transport synthesis of low-dimensional Te and explore its underlying application in monolithic integration.

摘要

作为一种元素半导体，碲（Te）因其高空穴迁移率、出色的环境稳定性和拓扑状态而闻名。在此，我们通过物理气相沉积策略在云母衬底上实现了角度间隔为60°的水平碲纳米带阵列（TRA）的可控合成。碲纳米带（TR）的生长由两个因素驱动，其中固有的准一维螺旋链结构促进了其长度的伸长；碲的[110]方向与云母的[110]方向之间的外延关系有利于其取向生长和宽度扩展。未报道过的TR的弯曲是由晶界引起的。基于TR的场效应晶体管分别表现出对应于397 cm² V⁻¹ s⁻¹ 和1.5×10⁴ 的高迁移率和开/关比。这些现象为深入了解低维碲的气相传输合成及其在单片集成中的潜在应用提供了契机。