Kim Giheon, Bahng Jaeuk, Jeong Jaemo, Sakong Wonkil, Lee Taegeon, Lee Daekwon, Kim Youngkuk, Rho Heesuk, Lim Seong Chu
Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea.
Department of Smart Fabrication Technology, Sungkyunkwan University, Suwon 16419, Republic of Korea.
Nano Lett. 2024 Sep 4;24(35):10820-10826. doi: 10.1021/acs.nanolett.4c02224. Epub 2024 Aug 28.
Two-dimensional trigonal tellurium (2D Te), a narrow-bandgap semiconductor with a bandgap of approximately 0.3 eV, hosts Weyl points near the band edge and exhibits a narrow, strong Berry curvature dipole (BCD). By applying a back-gate bias to align the Fermi level with the BCD, a sharp increase in the dissipationless transverse nonlinear Hall response is observed in 2D Te. Gate modulation of the BCD demonstrates an on/off ratio of 10 and a responsivity of nearly 10 V/W, while the longitudinal current induced by band modulation reaches an on/off ratio of about 10. This current is sustained up to 200 K, exhibiting a change of 3 orders of magnitude. The inclusion of both transistor action and rectification enhances the temperature sensitivity of the dissipationless Hall current, offering potential applications in electrothermal detectors and sensors and highlighting the significance of topological properties in advancing electronic applications.
二维三角碲（2D Te）是一种带隙约为0.3 eV的窄带隙半导体，在带边附近存在外尔点，并表现出狭窄而强烈的贝里曲率偶极子（BCD）。通过施加背栅偏压使费米能级与BCD对齐，在2D Te中观察到无耗散横向非线性霍尔响应急剧增加。对BCD进行栅极调制显示开/关比为10，响应度接近10 V/W，而能带调制引起的纵向电流开/关比约为10。该电流在高达200 K时仍能维持，变化幅度达3个数量级。晶体管作用和整流作用的结合提高了无耗散霍尔电流的温度敏感性，在电热探测器和传感器中具有潜在应用，并突出了拓扑特性在推进电子应用中的重要性。
