Sun Jingru, Jiang Meiqi, Zhou Qi, Wang Chunhua, Sun Yichuang
College of Computer Science and Electronic Engineering, Hunan University, Changsha 410082, China.
School of Engineering and Computer Science, University of Hertfordshire, Hatfield AL10 9AB, UK.
Micromachines (Basel). 2022 May 28;13(6):844. doi: 10.3390/mi13060844.
As a new type of nonvolatile device, the memristor has become one of the most promising technologies for designing a new generation of high-density memory. In this paper, a 4-bit high-density nonvolatile memory based on a memristor is designed and applied to image storage. Firstly, a memristor cluster structure consisting of a transistor and four memristors is designed. Furthermore, the memristor cluster is used as a memory cell in the crossbar array structure to realize the memory design. In addition, when the designed non-volatile memory is applied to gray scale image storage, only two memory cells are needed for the storage of one pixel. Through the Pspice circuit simulation, the results show that compared with the state-of-the-art technology, the memory designed in this paper has better storage density and read-write speed. When it is applied to image storage, it achieves the effect of no distortion and fast storage.
作为一种新型非易失性器件，忆阻器已成为设计新一代高密度存储器最具前景的技术之一。本文设计了一种基于忆阻器的4位高密度非易失性存储器并将其应用于图像存储。首先，设计了一种由一个晶体管和四个忆阻器组成的忆阻器簇结构。此外，该忆阻器簇被用作交叉阵列结构中的存储单元以实现存储器设计。另外，当所设计的非易失性存储器应用于灰度图像存储时，存储一个像素仅需两个存储单元。通过Pspice电路仿真，结果表明，与现有技术相比，本文设计的存储器具有更好的存储密度和读写速度。当将其应用于图像存储时，实现了无失真且存储快速的效果。
