亚阈值斜率低于60 mV/十倍频程的超薄硫化锡场效应晶体管。

Ultrathin tin sulfide field-effect transistors with subthreshold slope below 60 mV/decade.

作者信息

Dragoman Mircea, Dinescu Adrian, Avram Andrei, Dragoman Daniela, Vulpe Silviu, Aldrigo Martino, Braniste Tudor, Suman Victor, Rusu Emil, Tiginyanu Ion

机构信息

National Institute for Research and Development in Microtechnologies, 126A Erou Iancu Nicolae Street, 077190 Voluntari (Ilfov), Romania.

Univ. of Bucharest, Physics Faculty, PO Box MG-11, 077125 Bucharest, Romania.

出版信息

Nanotechnology. 2022 Jul 15;33(40). doi: 10.1088/1361-6528/ac7cf8.

DOI:10.1088/1361-6528/ac7cf8

PMID:35767973

Abstract

In this paper, we present for the first time a field-effect-transistor (FET) having a 10 nm thick tin sulfide (SnS) channel fabricated at the wafer scale with high reproducibility. SnS-based FETs are in on-state for increasing positive back-gate voltages up to 6 V, whereas the off-state is attained for negative back-gate voltages not exceeding -6 V, the on/off ratio being in the range 10-10depending on FET dimensions. The SnS FETs show a subthreshold slope (SS) below 60 mV/decade thanks to the in-plane ferroelectricity of SnS and attaining a minimum value SS = 21 mV/decade. Moreover, the low SS values can be explained by the existence of a negative value of the capacitance of the SnS thin film up to 10 GHz (for any DC bias voltage between 1 and 5 V), with the minimum value being -12.87 pF at 0.1 GHz.

摘要

在本文中，我们首次展示了一种场效应晶体管（FET），其具有在晶圆规模上以高重现性制造的10纳米厚硫化锡（SnS）沟道。基于SnS的FET在正向背栅电压增加至6 V时处于导通状态，而当负向背栅电压不超过 -6 V时达到关断状态，开/关比在10-10范围内，具体取决于FET尺寸。由于SnS的面内铁电性，SnS FET呈现出低于60 mV/十倍频程的亚阈值斜率（SS），并达到最小值SS = 21 mV/十倍频程。此外，低SS值可由SnS薄膜在高达10 GHz频率下（对于1至5 V之间的任何直流偏置电压）存在负电容值来解释，其在0.1 GHz时的最小值为 -12.87 pF。