Joy Arifuzzaman, Abir Ahnaf Tahmid, Mondal Bipanko Kumar, Hossain Jaker
Solar Energy Laboratory, Department of Electrical and Electronic Engineering, University of Rajshahi, Rajshahi 6205, Bangladesh.
Department of Electrical & Electronic Engineering, Pundra University of Science & Technology, Bogura, Bogura 5800, Bangladesh.
Heliyon. 2023 Aug 7;9(8):e19011. doi: 10.1016/j.heliyon.2023.e19011. eCollection 2023 Aug.
This paper theoretically outlines a new -AlSb/-AgInTe/-BaSi solar cell. The dominance of several factors such as depth, carrier density and defects of every layer on the photovoltaic (PV) outcome has been ascertained applying Solar Cell Capacitance Simulator (SCAPS)-1D computer-based simulator. The AgInTe (AIT) solar cell has been probed for finding the role of BaSi as a back surface field (BSF) layer. It is revealed that the device power conversion efficiency (PCE) increments from 30% to 34% owing to the use of BaSi semiconducting BSF with V = 0.90 V, J = 43.75 mA/cm, FF = 86.42%, respectively. The rippling of the output parameters with respect to the change in series and shunt resistances has also been probed and demonstrated. All the findings reveal the prospect of -AlSb/-AIT/-BaSi dual-heterojunction thin film photovoltaic cell.
本文从理论上概述了一种新型的-AlSb/-AgInTe/-BaSi太阳能电池。应用基于计算机的太阳能电池电容模拟器（SCAPS）-1D确定了诸如各层的深度、载流子密度和缺陷等几个因素对光伏（PV）结果的主导作用。对AgInTe（AIT）太阳能电池进行了研究，以确定BaSi作为背表面场（BSF）层的作用。结果表明，由于使用了V = 0.90 V、J = 43.75 mA/cm²、FF = 86.42%的BaSi半导体BSF，器件的功率转换效率（PCE）从30%提高到了34%。还研究并展示了输出参数相对于串联和并联电阻变化的波动情况。所有这些发现揭示了-AlSb/-AIT/-BaSi双异质结薄膜光伏电池的前景。
