Tonmoy Mehedi Hasan, Shiddique Sheikh Noman, Abir Ahnaf Tahmid, Hossain Jaker
Solar Energy Laboratory, Department of Electrical and Electronic Engineering, University of Rajshahi, Rajshahi, 6205, Bangladesh.
Heliyon. 2024 Mar 12;10(6):e27994. doi: 10.1016/j.heliyon.2024.e27994. eCollection 2024 Mar 30.
This article theoretically demonstrates an enormously efficient CdTe-FeSi based dual-junction tandem solar cell accompanied by slender semiconductor layers. The peak efficiency of the device has been ensured through the optimization of its various attributes of window, CdTe (bandgap 1.5 eV) top absorber, FeSi (bandgap 0.87 eV) bottom absorber and back surface layers. Additionally, the impacts of thickness, doping and the level of defects in different window, base and rear surface layers have been examined to observe how different layers affect the solar cell's performance. The optimized n-CdS/p-CdTe/p-MoS---CdS/p-FeSi/p-CuSnS dual-junction tandem solar device displays an efficiency of 43.9% with a voltage at no load, V of 1.928 V, current density under a closed circuit, J of 25.34 mA/cm, and fill factor of 89.88%, respectively. These results disclose the high potential of the suggested solar cell based on CdTe and FeSi compounds.
本文从理论上论证了一种基于碲化镉（CdTe）-硅化铁（FeSi）的高效双结串联太阳能电池，其具有超薄的半导体层。通过优化其窗口、碲化镉（带隙1.5电子伏特）顶部吸收层、硅化铁（带隙0.87电子伏特）底部吸收层和背面层的各种属性，确保了该器件的峰值效率。此外，还研究了不同窗口、基极和背面层的厚度、掺杂和缺陷水平的影响，以观察不同层如何影响太阳能电池的性能。优化后的n-硫化镉（CdS）/p-碲化镉（CdTe）/p-二硫化钼（MoS₂）-硫化镉（CdS）/p-硅化铁（FeSi）/p-铜锡硫（CuSnS）双结串联太阳能器件的效率为43.9%，空载电压V为1.928伏特，闭路电流密度J为25.34毫安/平方厘米，填充因子为89.88%。这些结果揭示了基于碲化镉和硅化铁化合物的建议太阳能电池的巨大潜力。
