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基于化学气相沉积石墨烯的高灵敏度霍尔传感器

Highly Sensitive Hall Sensors Based on Chemical Vapor Deposition Graphene.

作者信息

Tyagi Ayush, Martini Leonardo, Gebeyehu Zewdu M, Mišeikis Vaidotas, Coletti Camilla

机构信息

NEST, Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa, Italy.

Center for Nanotechnology Innovation @NEST, Instituto Italiano di Technologia, Piazza San Silvestro 12, 56127 Pisa, Italy.

出版信息

ACS Appl Nano Mater. 2023 Nov 21;7(16):18329-18336. doi: 10.1021/acsanm.3c03920. eCollection 2024 Aug 23.

DOI:10.1021/acsanm.3c03920
PMID:39206352
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11348313/
Abstract

In this work, we demonstrate highly sensitive and scalable Hall sensors fabricated by adopting arrays of monolayer single-crystal chemical vapor deposition (CVD) graphene. The devices are based on graphene Hall bars with a carrier mobility of >12000 cm V s and a low residual carrier density of ∼1 × 10 cm, showing Hall sensitivity higher than 5000 V A T, which is a value previously only achieved when using exfoliated graphene encapsulated with flakes of hexagonal boron nitride. We also implement a facile and scalable polymeric encapsulation, allowing the performance of graphene Hall bars to be stabilized when measured in an ambient environment. We demonstrate that this capping method can reduce the degradation of electrical transport properties when the graphene devices are kept in air over 10 weeks. State-of-the-art performance of the realized devices, based on scalable synthesis and encapsulation, contributes to the proliferation of graphene-based Hall sensors.

摘要

在这项工作中,我们展示了通过采用单层单晶化学气相沉积(CVD)石墨烯阵列制造的高灵敏度且可扩展的霍尔传感器。这些器件基于石墨烯霍尔条,其载流子迁移率大于12000 cm² V⁻¹ s⁻¹,残余载流子密度低至约1×10¹¹ cm⁻²,霍尔灵敏度高于5000 V A⁻¹ T⁻¹,这一数值此前仅在使用包裹有六方氮化硼薄片的剥离石墨烯时才能实现。我们还实现了一种简便且可扩展的聚合物封装方法,使得石墨烯霍尔条在环境空气中测量时性能得以稳定。我们证明,当石墨烯器件在空气中放置超过10周时,这种封装方法能够减少其电输运性能的退化。基于可扩展的合成与封装技术,所实现器件的先进性能有助于推动基于石墨烯的霍尔传感器的广泛应用。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1b0f/11348313/f1ef0a361cfc/an3c03920_0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1b0f/11348313/7ea2c89dc46a/an3c03920_0001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1b0f/11348313/c0bfc398036a/an3c03920_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1b0f/11348313/f1ef0a361cfc/an3c03920_0003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1b0f/11348313/7ea2c89dc46a/an3c03920_0001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1b0f/11348313/c0bfc398036a/an3c03920_0002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1b0f/11348313/f1ef0a361cfc/an3c03920_0003.jpg

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本文引用的文献

1
Ultra-clean high-mobility graphene on technologically relevant substrates.技术相关衬底上的超洁净高迁移率石墨烯。
Nanoscale. 2022 Feb 10;14(6):2167-2176. doi: 10.1039/d1nr05904a.
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Frontiers of graphene-based Hall-effect sensors.基于石墨烯的霍尔效应传感器前沿
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Ultra-thin NaCl films as protective layers for graphene.超薄 NaCl 薄膜作为石墨烯的保护层。
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