Song Seunguk, Yoon Aram, Ha Jong-Kwon, Yang Jihoon, Jang Sora, Leblanc Chloe, Wang Jaewon, Sim Yeoseon, Jariwala Deep, Min Seung Kyu, Lee Zonghoon, Kwon Soon-Yong
Department of Materials Science and Engineering & Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea.
Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA.
Nat Commun. 2022 Aug 22;13(1):4916. doi: 10.1038/s41467-022-32582-9.
The edge-to-edge connected metal-semiconductor junction (MSJ) for two-dimensional (2D) transistors has the potential to reduce the contact length while improving the performance of the devices. However, typical 2D materials are thermally and chemically unstable, which impedes the reproducible achievement of high-quality edge contacts. Here we present a scalable synthetic strategy to fabricate low-resistance edge contacts to atomic transistors using a thermally stable 2D metal, PtTe. The use of PtTe as an epitaxial template enables the lateral growth of monolayer MoS to achieve a PtTe-MoS MSJ with the thinnest possible, seamless atomic interface. The synthesized lateral heterojunction enables the reduced dimensions of Schottky barriers and enhanced carrier injection compared to counterparts composed of a vertical 3D metal contact. Furthermore, facile position-selected growth of PtTe-MoS MSJ arrays using conventional lithography can facilitate the design of device layouts with high processability, while providing low contact resistivity and ultrashort transfer length on wafer scales.
用于二维（2D）晶体管的边缘到边缘连接的金属 - 半导体结（MSJ）有潜力在提高器件性能的同时减小接触长度。然而，典型的二维材料在热和化学方面不稳定，这阻碍了可重复实现高质量的边缘接触。在此，我们提出一种可扩展的合成策略，使用热稳定的二维金属PtTe制造与原子晶体管的低电阻边缘接触。使用PtTe作为外延模板能够实现单层MoS的横向生长，以形成具有尽可能薄的无缝原子界面的PtTe - MoS MSJ。与由垂直三维金属接触组成的同类结构相比，合成的横向异质结能够减小肖特基势垒的尺寸并增强载流子注入。此外，使用传统光刻技术对PtTe - MoS MSJ阵列进行简便的位置选择生长，能够促进具有高可加工性的器件布局设计，同时在晶圆尺度上提供低接触电阻率和超短转移长度。
