Hashemi Maryam, Saki Zahra, Dehghani Mehdi, Tajabadi Fariba, Ghorashi Seyed Mohammad Bagher, Taghavinia Nima
Department of Laser and Photonics, University of Kashan, Kashan, PO Box 873175-3153, Iran.
Department of Physics, Sharif University of Technology, Tehran, 14588, Iran.
Sci Rep. 2022 Aug 30;12(1):14715. doi: 10.1038/s41598-022-18579-w.
In this paper, the properties of CuInSe (CISe) films deposited on three transparent substrates (FTO, FTO/NiO, FTO/MoO) are studied. These substrates might be used for bifacial solar cells, in place of the conventional glass/Mo substrates. CISe layers are deposited by spray pyrolysis followed by a selenization process. For the same deposition conditions, the CISe layers on FTO show the largest grain size (~ 0.50 µm) and crystallinity, while FTO/MoO substrates result in the smallest grains (~ 0.15 µm). The optical bandgap of the CISe films ranged from 1.35 eV for FTO substrate to 1.44 eV for FTO/MoO substrate. All films show p-type conductivity, with the carrier densities of 1.6 × 10 cm, 5.4 × 10 cm, and 2.4 × 10 cm for FTO, FTO/NiO, and FTO/MoO substrates, respectively. The CISe films also show different conduction, and valence levels, based on the substrate. In all cases, an ohmic behavior is observed between the CISe and substrate. The results demonstrate that CISe layer crystallinity, carrier concentration, mobility, and energy levels are strongly dependent on the chemical nature of the substrate. Bare FTO shows the most appropriate performance in terms of device requirements.
本文研究了沉积在三种透明衬底（FTO、FTO/NiO、FTO/MoO）上的铜铟硒（CISe）薄膜的性能。这些衬底可用于双面太阳能电池，以替代传统的玻璃/Mo衬底。通过喷雾热解沉积CISe层，随后进行硒化处理。在相同的沉积条件下，FTO上的CISe层显示出最大的晶粒尺寸（约0.50μm）和结晶度，而FTO/MoO衬底上的晶粒最小（约0.15μm）。CISe薄膜的光学带隙范围从FTO衬底的1.35eV到FTO/MoO衬底的1.44eV。所有薄膜均显示p型导电性，FTO、FTO/NiO和FTO/MoO衬底的载流子密度分别为1.6×10cm、5.4×10cm和2.4×10cm。基于衬底的不同，CISe薄膜还显示出不同的导带和价带能级。在所有情况下，在CISe和衬底之间均观察到欧姆行为。结果表明，CISe层的结晶度、载流子浓度、迁移率和能级强烈依赖于衬底的化学性质。就器件要求而言，裸FTO表现出最合适的性能。
