Atabaki Amir H, Eftekhar Ali A, Askari Murtaza, Adibi Ali
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA.
Opt Express. 2013 Jun 17;21(12):14139-45. doi: 10.1364/OE.21.014139.
One of the challenges of the high refractive index contrast of silicon photonics platform is the high sensitivity of the resonance wavelength of resonators to dimensional variations caused by fabrication process variations. In this work, we have experimentally demonstrated an accurate post-fabrication trimming technique for optical devices that is robust to process variations. Using this technique, we have reduced the random variation of the resonance wavelength of 4 µm diameter resonators by a factor of 6 to below 50 pm. The level of accuracy achieved in this work is adequate for most of the RF-photonic, interconnect, and optical signal processing applications. We also discuss the throughput of this technique and its viability for wafer-scale post-fabrication trimming of silicon photonic chips.
硅光子学平台的高折射率对比度所带来的挑战之一是，谐振器的谐振波长对由制造工艺变化引起的尺寸变化高度敏感。在这项工作中，我们通过实验证明了一种用于光学器件的精确的制造后微调技术，该技术对工艺变化具有鲁棒性。使用该技术，我们已将直径为4 µm的谐振器的谐振波长的随机变化降低了6倍，降至50 pm以下。这项工作所达到的精度水平对于大多数射频光子、互连和光信号处理应用而言已足够。我们还讨论了该技术的产量及其用于硅光子芯片晶圆级制造后微调的可行性。
