Suppr超能文献

二维范德华异质结构中层间激子的极化切换与电学调控

Polarization switching and electrical control of interlayer excitons in two-dimensional van der Waals heterostructures.

作者信息

Ciarrocchi Alberto, Unuchek Dmitrii, Avsar Ahmet, Watanabe Kenji, Taniguchi Takashi, Kis Andras

机构信息

Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland.

Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland.

出版信息

Nat Photonics. 2019 Feb;13(2):131-136. doi: 10.1038/s41566-018-0325-y. Epub 2018 Dec 31.

Abstract

Long-lived interlayer excitons in van der Waals heterostructures based on transition metal dichalcogenides, together with unique spin-valley physics, make them promising for next-generation photonic and valleytronic devices. While the emission characteristics of interlayer excitons have been studied, efficient manipulation of their valley-state, a necessary requirement for information encoding, is still lacking. Here, we demonstrate comprehensive electrical control of interlayer excitons in a MoSe/WSe heterostructure. Encapsulation of our well-aligned stack with hexagonal boron nitride (h-BN) allows us to resolve two separate narrow interlayer transitions with opposite helicities under circularly polarized excitation, either preserving or reversing the polarization of incoming light. By electrically controlling their relative intensities, we realize a polarization switch with tuneable emission intensity and wavelength. Finally, we demonstrate large Zeeman shifts of these two transitions upon application of an external magnetic field. These results are interpreted within the picture of moiré-induced brightening of forbidden optical transitions. The ability to control the polarization of interlayer excitons is a step forward towards the manipulation of the valley degree-of-freedom in realistic device applications.

摘要

基于过渡金属二卤化物的范德华异质结构中的长寿命层间激子,连同独特的自旋-谷物理特性,使其在下一代光子和谷电子器件方面具有广阔前景。虽然已经对层间激子的发射特性进行了研究,但对于信息编码的必要要求——对其谷态的有效操控仍然欠缺。在此,我们展示了在MoSe₂/WSe₂异质结构中层间激子的全面电学控制。用六方氮化硼(h-BN)封装我们排列良好的堆叠结构,使我们能够在圆偏振激发下分辨出具有相反螺旋度的两个单独的窄层间跃迁,既可以保持也可以反转入射光的偏振。通过电学控制它们的相对强度,我们实现了一种发射强度和波长可调的偏振开关。最后,我们展示了在施加外部磁场时这两个跃迁的大塞曼位移。这些结果在莫尔诱导的禁戒光学跃迁变亮的图景中得到了解释。控制层间激子偏振的能力是在实际器件应用中操控谷自由度方面向前迈出的一步。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/bf78/6420072/ef453df25ed5/emss-80541-f001.jpg

文献AI研究员

20分钟写一篇综述,助力文献阅读效率提升50倍。

立即体验

用中文搜PubMed

大模型驱动的PubMed中文搜索引擎

马上搜索

文档翻译

学术文献翻译模型,支持多种主流文档格式。

立即体验