Kim Seonkwon, Kim Su Hyun, Hwang Hui Ung, Kim Jeongmin, Kim Jeong Won, Kwak In Cheol, Kang Byeongjae, Lee Seungjae, Jo Sae Byeok, Ryu Du Yeol, Kim Hyunjung, Myoung Jae-Min, Kang Moon Sung, Oh Saeroonter, Cho Jeong Ho
Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul, Republic of Korea.
Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon, Republic of Korea.
Nat Commun. 2025 Aug 11;16(1):7427. doi: 10.1038/s41467-025-62770-2.
Mitigating the oxidation susceptibility of Sn remains a critical issue for improving the environmental stability of lead-free perovskites. Herein, we show that the oxidized surface layer of Sn-based perovskites can be utilized to improve transistor performance, rather than being entirely suppressed. We report perovskite-IGZO junction field-effect transistors that use this oxidized layer to suppress gate current to below 10 A, enabling enhancement-mode operation. We refer to these as barriered junction field-effect transistors. The combination of the gate leakage suppression and high polarizability of the perovskite layer results in a field-effect mobility of 29.4 cmVs, subthreshold swing of 67.1 mV dec, and on/off current ratio exceeding 10 under ≤1 V operation. These devices maintain stable operation in ambient conditions. Furthermore, we demonstrate their applicability by constructing logic gates such as NOT, NOR and NAND. These findings highlight the potential of exploiting Sn-based perovskite oxidation to advance electronic devices.
减轻锡的氧化敏感性仍然是提高无铅钙钛矿环境稳定性的关键问题。在此，我们表明，锡基钙钛矿的氧化表面层可用于提高晶体管性能，而不是完全被抑制。我们报道了一种钙钛矿-铟镓锌氧化物（IGZO）结场效应晶体管，该晶体管利用这一氧化层将栅极电流抑制到10 A以下，实现增强型操作。我们将这些晶体管称为势垒结场效应晶体管。栅极泄漏抑制和钙钛矿层的高极化率相结合，使得场效应迁移率达到29.4 cm²V⁻¹s⁻¹，亚阈值摆幅为67.1 mV decade⁻¹，并且在≤1 V的操作电压下开/关电流比超过10。这些器件在环境条件下保持稳定运行。此外，我们通过构建诸如非门、或非门和与非门等逻辑门来展示它们的适用性。这些发现突出了利用锡基钙钛矿氧化来推进电子器件发展的潜力。
