Kim Lae Ho, Kim Kyunghun, Park Seonuk, Jeong Yong Jin, Kim Haekyoung, Chung Dae Sung, Kim Se Hyun, Park Chan Eon
Polymer Research Institute, Department of Chemical Engineering, Pohang University of Science and Technology , Pohang, North Gyeongsang 790-784, South Korea.
ACS Appl Mater Interfaces. 2014 May 14;6(9):6731-8. doi: 10.1021/am500458d. Epub 2014 Apr 18.
Organic electronic devices require a passivation layer that protects the active layers from moisture and oxygen because most organic materials are very sensitive to such gases. Passivation films for the encapsulation of organic electronic devices need excellent stability and mechanical properties. Although Al2O3 films obtained with plasma enhanced atomic layer deposition (PEALD) have been tested as passivation layers because of their excellent gas barrier properties, amorphous Al2O3 films are significantly corroded by water. In this study, we examined the deformation of PEALD Al2O3 films when immersed in water and attempted to fabricate a corrosion-resistant passivation film by using a PEALD-based Al2O3/TiO2 nanolamination (NL) technique. Our Al2O3/TiO2 NL films were found to exhibit excellent water anticorrosion and low gas permeation and require only low-temperature processing (<100 °C). Organic thin film transistors with excellent air-stability (52 days under high humidity (a relative humidity of 90% and a temperature of 38 °C)) were fabricated.
有机电子器件需要一个钝化层来保护活性层免受水分和氧气的影响，因为大多数有机材料对这些气体非常敏感。用于封装有机电子器件的钝化膜需要具有优异的稳定性和机械性能。尽管通过等离子体增强原子层沉积（PEALD）获得的Al2O3膜因其优异的气体阻隔性能而被测试用作钝化层，但非晶Al2O3膜会被水显著腐蚀。在本研究中，我们研究了PEALD Al2O3膜在水中浸泡时的变形情况，并尝试通过使用基于PEALD的Al2O3/TiO2纳米层压（NL）技术制备一种耐腐蚀的钝化膜。我们发现我们的Al2O3/TiO2 NL膜表现出优异的耐水性和低气体渗透性，并且只需要低温处理（<100°C）。制备了具有优异空气稳定性（在高湿度（相对湿度90%，温度38°C）下52天）的有机薄膜晶体管。
