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局部应变和隧穿电流调制二硫化钼单层中的激子发光。

Local strain and tunneling current modulate excitonic luminescence in MoS monolayers.

作者信息

Ma Yalan, Kalt Romana Alice, Stemmer Andreas

机构信息

Nanotechnology Group, ETH Zürich Säumerstrasse 4 Rüschlikon 8803 Switzerland

出版信息

RSC Adv. 2022 Sep 1;12(38):24922-24929. doi: 10.1039/d2ra05123k. eCollection 2022 Aug 30.

Abstract

The excitonic luminescence of monolayer molybdenum disulfide (MoS) on a gold substrate is studied by scanning tunneling microscopy (STM). STM-induced light emission (STM-LE) from MoS is assigned to the radiative decay of and excitons. The intensity ratio of and exciton emission is modulated by the tunneling current, since the exciton emission intensity saturates at high tunneling currents. Moreover, the corrugated gold substrate introduces local strain to the monolayer MoS, resulting in significant changes of electronic bandgap and valence band splitting. The modulation rate of strain on exciton energy is estimated as -69 ± 5 meV/%. STM-LE provides a direct link between exciton energy and local strain in monolayer MoS on a length scale of 10 nm.

摘要

通过扫描隧道显微镜(STM)研究了金衬底上单层二硫化钼(MoS)的激子发光。来自MoS的STM诱导发光(STM-LE)被归因于 和 激子的辐射衰减。由于 激子发射强度在高隧穿电流下饱和, 和 激子发射的强度比由隧穿电流调制。此外,波纹状金衬底给单层MoS引入局部应变,导致电子带隙和价带分裂发生显著变化。 激子能量上应变的调制率估计为-69±5 meV/%。STM-LE在10 nm长度尺度上提供了单层MoS中激子能量与局部应变之间的直接联系。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a431/9434384/265d6a2e3e55/d2ra05123k-f1.jpg

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