Liu Ao, Zhu Huihui, Zou Taoyu, Reo Youjin, Ryu Gi-Seong, Noh Yong-Young
Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea.
Nat Commun. 2022 Oct 26;13(1):6372. doi: 10.1038/s41467-022-34119-6.
The exploration of stable and high-mobility semiconductors that can be grown over a large area using cost-effective methods continues to attract the interest of the electronics community. However, many mainstream candidates are challenged by scarce and expensive components, manufacturing costs, low stability, and limitations of large-area growth. Herein, we report wafer-scale ultrathin (metal) chalcogenide semiconductors for high-performance complementary electronics using standard room temperature thermal evaporation. The n-type bismuth sulfide delivers an in-situ transition from a conductor to a high-mobility semiconductor after mild post-annealing with self-assembly phase conversion, achieving thin-film transistors with mobilities of over 10 cm V s, on/off current ratios exceeding 10, and high stability. Complementary inverters are constructed in combination with p-channel tellurium device with hole mobilities of over 50 cm V s, delivering remarkable voltage transfer characteristics with a high gain of 200. This work has laid the foundation for depositing scalable electronics in a simple and cost-effective manner, which is compatible with monolithic integration with commercial products such as organic light-emitting diodes.
探索能够使用经济高效的方法大面积生长的稳定且高迁移率的半导体，持续吸引着电子学界的关注。然而，许多主流候选材料面临着稀缺且昂贵的组件、制造成本、低稳定性以及大面积生长的局限性等挑战。在此，我们报告了使用标准室温热蒸发法制备的用于高性能互补电子器件的晶圆级超薄（金属）硫族化物半导体。n型硫化铋在经过温和的退火后通过自组装相转变从导体原位转变为高迁移率半导体，实现了迁移率超过10 cm² V⁻¹ s⁻¹、开/关电流比超过10且具有高稳定性的薄膜晶体管。互补逆变器是与空穴迁移率超过50 cm² V⁻¹ s⁻¹的p沟道碲器件组合构建的，具有高达200的高增益，展现出卓越的电压传输特性。这项工作为以简单且经济高效的方式沉积可扩展电子器件奠定了基础，这种方式与有机发光二极管等商业产品的单片集成兼容。
Zotero 插件
