Li Ying, Yin Shiqi, Du Yuchen, Zhang Hui, Chen Jiawang, Wang Zihan, Wang Shaotian, Qin Qinggang, Zhou Min, Li Liang
Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P.R. China.
Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, P.R. China.
Nanoscale. 2022 Nov 24;14(45):16797-16805. doi: 10.1039/d2nr04535d.
Amorphous indium zinc tin oxide (a-IZTO) is a kind of transparent conductive oxide (TCO), which can be used in transparent electrodes, transistors, and flexible devices. At present, a key limitation of a-IZTO is the costly vacuum manufacturing technology, and its commercial production is also restricted by the complex raw material preparation process. In this article, we report a liquid metal-based van der Waals (vdW) exfoliation technique by which a-IZTO films with several nanometres thickness are fabricated. The a-IZTO films fabricated in ambient air have a size on the centimeter scale and an optical transmittance of 99.64%; they are also large-area flexible oxide films. In order to illustrate the capabilities of this technology, we fabricated thin film transistors (TFTs) and photodetectors based on a-IZTO films. An a-IZTO thin film transistor (TFT) has an on/off ratio of 10. When the is 5 V, the responsivity, detectivity and external quantum efficiency of an a-IZTO photodetector are 7.57 × 10 A W, 4.00 × 10 Jones and 3.68 × 10%, respectively, exhibiting one of the top performances in this field.