Zhu Maguang, Lu Peng, Wang Xuan, Chen Qian, Zhu Huiping, Zhang Yajie, Zhou Jianshuo, Xu Haitao, Han Zhengsheng, Han Jianwei, Chen Rui, Li Bo, Peng Lian-Mao, Zhang Zhiyong
Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing, 100871, P. R. China.
Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, P. R. China.
Small. 2023 Jan;19(1):e2204537. doi: 10.1002/smll.202204537. Epub 2022 Nov 11.
Carbon nanotube (CNT) field-effect transistors (FETs) have been considered ideal building blocks for radiation-hard integrated circuits (ICs), the demand for which is exponentially growing, especially in outer space exploration and the nuclear industry. Many studies on the radiation tolerance of CNT-based electronics have focused on the total ionizing dose (TID) effect, while few works have considered the single event effects (SEEs) and displacement damage (DD) effect, which are more difficult to measure but may be more important in practical applications. Measurements of the SEEs and DD effect of CNT FETs and ICs are first executed and then presented a comprehensive radiation effect analysis of CNT electronics. The CNT ICs without special irradiation reinforcement technology exhibit a comprehensive radiation tolerance, including a 1 × 10 MeVcm mg level of the laser-equivalent threshold linear energy transfer (LET) for SEEs, 2.8 × 10 MeV g for DD and 2 Mrad (Si) for TID, which are at least four times higher than those in conventional radiation-hardened ICs. The ultrahigh intrinsic comprehensive radiation tolerance will promote the applications of CNT ICs in high-energy solar and cosmic radiation environments.
碳纳米管（CNT）场效应晶体管（FET）被认为是抗辐射集成电路（IC）的理想构建模块，其需求正呈指数级增长，尤其是在外层空间探索和核工业领域。许多关于基于CNT的电子产品抗辐射能力的研究都集中在总电离剂量（TID）效应上，而很少有研究考虑单粒子效应（SEE）和位移损伤（DD）效应，这两种效应更难测量，但在实际应用中可能更重要。首先对CNT FET和IC的SEE和DD效应进行了测量，然后对CNT电子产品进行了全面的辐射效应分析。没有特殊辐照增强技术的CNT IC表现出全面的抗辐射能力，包括SEE的激光等效阈值线能量转移（LET）为1×10 MeVcm²/mg水平、DD为2.8×10 MeV/g以及TID为2 Mrad（Si），这些至少是传统抗辐射IC的四倍。超高的固有全面抗辐射能力将推动CNT IC在高能太阳和宇宙辐射环境中的应用。
