Barman Kuntal, Lin Dai-Jie, Gupta Rohit, Chang Chih-Kang, Huang Jian-Jang
Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan.
Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan.
Materials (Basel). 2023 Jan 6;16(2):582. doi: 10.3390/ma16020582.
In this study, we propose and simulate the design of a non-regrowth staircase channel GaN vertical trench transistor, demonstrating an exceptional threshold and breakdown characteristic for high power and high frequency applications. The unique staircase design provides a variable capacitance through the gate-dielectric-semiconductor interface, which results in a high breakdown voltage of 1.52 kV and maintains a channel on-resistance of 2.61 mΩ∙cm. Because of the variable length and doping profile in the channel region, this model offers greater flexibility to meet a wide range of device application requirements.
在本研究中，我们提出并模拟了一种非再生长阶梯沟道氮化镓垂直沟槽晶体管的设计，该晶体管在高功率和高频应用中展现出优异的阈值和击穿特性。独特的阶梯设计通过栅极 - 电介质 - 半导体界面提供可变电容，这导致了1.52 kV的高击穿电压，并保持了2.61 mΩ∙cm的沟道导通电阻。由于沟道区域中长度和掺杂分布可变，该模型提供了更大的灵活性，以满足广泛的器件应用要求。
