Zheng Panpan, Cai Bingyang, Zhu Tao, Yu Li, Wu Wenjie, Tu Liangcheng
WuHan National Laboratory for Optoelectronics, Wuhan 430074, China.
The MOE Key Laboratory of Fundamental, Physical Quantities Measurement, Hubei Key Laboratory of Gravitation and Quantum Physics, PGMF and School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China.
Micromachines (Basel). 2022 Dec 31;14(1):122. doi: 10.3390/mi14010122.
The measurements of wafers' surface profile are crucial for safeguarding the fabrication quality of integrated circuits and MEMS devices. The current techniques measure the profile mainly by moving a capacitive or optical spacing sensing probe along multiple lines, which is high-cost and inefficient. This paper presents the calculation, simulation and experiment of a method for measuring the surface profile with arrayed capacitive spacing transducers. The calculation agreed well with the simulation and experiment. Finally, the proposed method was utilized for measuring the profile of a silicon wafer. The result is consistent with that measured by a commercial instrument. As a movement system is not required, the proposed method is promising for industry applications with superior cost and efficiency to the existing technology.
晶圆表面轮廓的测量对于保障集成电路和微机电系统（MEMS）器件的制造质量至关重要。当前技术主要通过沿着多条线移动电容式或光学间距传感探头来测量轮廓，这成本高昂且效率低下。本文介绍了一种使用阵列电容式间距传感器测量表面轮廓的方法的计算、模拟和实验。计算结果与模拟和实验结果吻合良好。最后，所提出的方法被用于测量硅片的轮廓。结果与商用仪器测量的结果一致。由于不需要移动系统，所提出的方法在工业应用中具有前景，与现有技术相比，具有成本和效率优势。
