Lebedev Alexander A, Kozlovski Vitali V, Davydovskaya Klavdia S, Levinshtein Mikhail E
Solid State Electronic Department, Ioffe Institute, Politekhnicheskaya Street 26, 194021 St. Petersburg, Russia.
Department of Experimental Physics, St. Petersburg State Polytechnic University, Polytekhnicheskaya 29, 195251 St. Petersburg, Russia.
Materials (Basel). 2021 Aug 31;14(17):4976. doi: 10.3390/ma14174976.
The radiation hardness of silicon carbide with respect to electron and proton irradiation and its dependence on the irradiation temperature are analyzed. It is shown that the main mechanism of SiC compensation is the formation of deep acceptor levels. With increasing the irradiation temperature, the probability of the formation of these centers decreases, and they are partly annealed out. As a result, the carrier removal rate in SiC becomes ~6 orders of magnitude lower in the case of irradiation at 500 °C. Once again, this proves that silicon carbide is promising as a material for high-temperature electronics devices.
分析了碳化硅相对于电子和质子辐照的辐射硬度及其对辐照温度的依赖性。结果表明，碳化硅补偿的主要机制是深受主能级的形成。随着辐照温度的升高，这些中心形成的概率降低，并且它们会部分退火。结果，在500℃辐照的情况下，碳化硅中的载流子去除率降低了约6个数量级。这再次证明碳化硅作为高温电子器件的材料具有前景。
