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一种基于铁电铪锆氧化物的多时间尺度突触权重。

A multi-timescale synaptic weight based on ferroelectric hafnium zirconium oxide.

作者信息

Halter Mattia, Bégon-Lours Laura, Sousa Marilyne, Popoff Youri, Drechsler Ute, Bragaglia Valeria, Offrein Bert Jan

机构信息

IBM Research Europe - Zurich Research Laboratory, CH-8803 Rüschlikon, Switzerland.

ETH Zurich - Integrated Systems Laboratory, CH-8092 Zurich, Switzerland.

出版信息

Commun Mater. 2023;4(1):14. doi: 10.1038/s43246-023-00342-x. Epub 2023 Feb 17.


DOI:10.1038/s43246-023-00342-x
PMID:36843629
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9936949/
Abstract

Brain-inspired computing emerged as a forefront technology to harness the growing amount of data generated in an increasingly connected society. The complex dynamics involving short- and long-term memory are key to the undisputed performance of biological neural networks. Here, we report on sub-µm-sized artificial synaptic weights exploiting a combination of a ferroelectric space charge effect and oxidation state modulation in the oxide channel of a ferroelectric field effect transistor. They lead to a quasi-continuous resistance tuning of the synapse by a factor of and a fine-grained weight update of more than resistance values. We leverage a fast, saturating ferroelectric effect and a slow, ionic drift and diffusion process to engineer a multi-timescale artificial synapse. Our device demonstrates an endurance of more than cycles, a ferroelectric retention of more than years, and various types of volatility behavior on distinct timescales, making it well suited for neuromorphic and cognitive computing.

摘要

受大脑启发的计算作为一种前沿技术应运而生,用于处理日益互联的社会中产生的越来越多的数据。涉及短期和长期记忆的复杂动态过程是生物神经网络无可争议的性能的关键。在此,我们报告了利用铁电场效应晶体管氧化物通道中的铁电空间电荷效应和氧化态调制相结合的亚微米级人工突触权重。它们导致突触的准连续电阻调谐系数为 ,并实现了超过 个电阻值的细粒度权重更新。我们利用快速饱和的铁电效应和缓慢的离子漂移与扩散过程来设计一个多时间尺度的人工突触。我们的器件展示了超过 次的耐久性、超过 年的铁电保持性以及在不同时间尺度上的各种类型的波动性,使其非常适合神经形态和认知计算。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2bdc/9936949/3ffd96e3590d/43246_2023_342_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2bdc/9936949/081c2daa3f29/43246_2023_342_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2bdc/9936949/7b46a66e532d/43246_2023_342_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2bdc/9936949/e29d4c293202/43246_2023_342_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2bdc/9936949/47e86ce744c2/43246_2023_342_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2bdc/9936949/72260ca88317/43246_2023_342_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2bdc/9936949/3ffd96e3590d/43246_2023_342_Fig6_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2bdc/9936949/081c2daa3f29/43246_2023_342_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2bdc/9936949/7b46a66e532d/43246_2023_342_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2bdc/9936949/e29d4c293202/43246_2023_342_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2bdc/9936949/47e86ce744c2/43246_2023_342_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2bdc/9936949/72260ca88317/43246_2023_342_Fig5_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/2bdc/9936949/3ffd96e3590d/43246_2023_342_Fig6_HTML.jpg

相似文献

[1]
A multi-timescale synaptic weight based on ferroelectric hafnium zirconium oxide.

Commun Mater. 2023

[2]
Synaptic Emulation via Ferroelectric P(VDF-TrFE) Reinforced Charge Trapping/Detrapping in Zinc-Tin Oxide Transistor.

ACS Appl Mater Interfaces. 2022-4-13

[3]
Ferroelectric field-effect transistors based on HfO: a review.

Nanotechnology. 2021-9-22

[4]
Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights.

ACS Appl Mater Interfaces. 2020-4-15

[5]
From Ferroelectric Material Optimization to Neuromorphic Devices.

Adv Mater. 2023-9

[6]
Reconfigurable Quasi-Nonvolatile Memory/Subthermionic FET Functions in Ferroelectric-2D Semiconductor vdW Architectures.

Adv Mater. 2022-4

[7]
A FeFET with a novel MFMFIS gate stack: towards energy-efficient and ultrafast NVMs for neuromorphic computing.

Nanotechnology. 2021-7-29

[8]
Flexible aluminum-doped hafnium oxide ferroelectric synapse devices for neuromorphic computing.

Mater Horiz. 2023-8-29

[9]
Ferroelectric artificial synapse for neuromorphic computing and flexible applications.

Fundam Res. 2022-3-1

[10]
Ferroelectric materials for neuroinspired computing applications.

Fundam Res. 2023-5-19

引用本文的文献

[1]
Growth of emergent simple pseudo-binary ferroelectrics and their potential in neuromorphic computing devices.

Mater Horiz. 2024-5-20

本文引用的文献

[1]
Voltage-dependent synaptic plasticity: Unsupervised probabilistic Hebbian plasticity rule based on neurons membrane potential.

Front Neurosci. 2022-10-21

[2]
A Reconfigurable Two-WSe -Transistor Synaptic Cell for Reinforcement Learning.

Adv Mater. 2022-12

[3]
Ferroelectric field-effect transistors based on HfO: a review.

Nanotechnology. 2021-9-22

[4]
Impact of COVID-19 on IoT Adoption in Healthcare, Smart Homes, Smart Buildings, Smart Cities, Transportation and Industrial IoT.

Sensors (Basel). 2021-6-1

[5]
Artificial Synapses Based on Ferroelectric Schottky Barrier Field-Effect Transistors for Neuromorphic Applications.

ACS Appl Mater Interfaces. 2021-7-14

[6]
Back-End, CMOS-Compatible Ferroelectric Field-Effect Transistor for Synaptic Weights.

ACS Appl Mater Interfaces. 2020-4-15

[7]
Artificial Synapse Based on van der Waals Heterostructures with Tunable Synaptic Functions for Neuromorphic Computing.

ACS Appl Mater Interfaces. 2020-3-11

[8]
Analog Switching and Artificial Synaptic Behavior of Ag/SiO:Ag/TiO/p-Si Memristor Device.

Nanoscale Res Lett. 2020-1-31

[9]
Recent Progress in Three-Terminal Artificial Synapses: From Device to System.

Small. 2019-4-11

[10]
Ferroelectric Analog Synaptic Transistors.

Nano Lett. 2019-2-6

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