Band Gap Narrowing in a High-Entropy Spinel Oxide Semiconductor for Enhanced Oxygen Evolution Catalysis.

High-entropy oxides (HEOs), which contain five or more metal cations that are generally thought to be randomly mixed in a crystalline oxide lattice, can exhibit unique and enhanced properties, including improved catalytic performance, due to synergistic effects. Here, we show that band gap narrowing emerges in a high-entropy aluminate spinel oxide, (FeCoNiCuZn)AlO (AlO). The 0.9 eV band gap of AlO is narrower than the band gaps of all parent spinel oxides. First-principles calculations for multicomponent AlO spinels indicate that the band gap narrowing arises from the broadening of the energy distribution of the 3d states due to variations in the electronegativities and crystal field splitting across the 3d transition-metal series. As a catalyst for the oxygen evolution reaction in an alkaline electrolyte, AlO reaches a current density of 10 mA/cm at an overpotential of 400 mV, outperforming all of the single-metal end members at an applied potential of 1.7 V vs RHE. Catalyst deactivation occurs after 5 h at 10 mA/cm and is attributed, based on elemental analysis and grazing-incidence X-ray diffraction, to the formation of a passivating layer that blocks the high-entropy oxide surface. This result helps to validate that the HEO is the active catalyst. The observation of band gap narrowing in AlO expands the scope of synergistic properties exhibited by high-entropy materials and offers insight into the question of how the electronic structure of multicomponent oxide materials can be engineered via a high-entropy approach to achieve enhanced catalytic properties.