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量子点器件中均匀性的电控制。

Electrical Control of Uniformity in Quantum Dot Devices.

机构信息

QuTech and Kavli Institute of Nanoscience, Delft University of Technology, PO Box 5046, 2600 GA Delft, The Netherlands.

QuTech and Netherlands Organisation for Applied Scientific Research (TNO), PO Box 155, 2600 AD Delft, The Netherlands.

出版信息

Nano Lett. 2023 Apr 12;23(7):2522-2529. doi: 10.1021/acs.nanolett.2c04446. Epub 2023 Mar 28.

Abstract

Highly uniform quantum systems are essential for the practical implementation of scalable quantum processors. While quantum dot spin qubits based on semiconductor technology are a promising platform for large-scale quantum computing, their small size makes them particularly sensitive to their local environment. Here, we present a method to electrically obtain a high degree of uniformity in the intrinsic potential landscape using hysteretic shifts of the gate voltage characteristics. We demonstrate the tuning of pinch-off voltages in quantum dot devices over hundreds of millivolts that then remain stable at least for hours. Applying our method, we homogenize the pinch-off voltages of the plunger gates in a linear array for four quantum dots, reducing the spread in pinch-off voltages by one order of magnitude. This work provides a new tool for the tuning of quantum dot devices and offers new perspectives for the implementation of scalable spin qubit arrays.

摘要

高度均匀的量子系统对于可扩展量子处理器的实际实现至关重要。虽然基于半导体技术的量子点自旋量子位是大规模量子计算的一个有前途的平台,但它们的小尺寸使得它们对其局部环境特别敏感。在这里,我们提出了一种使用门电压特性的滞后偏移来在内在势景观中获得高度均匀性的方法。我们证明了在量子点器件中可以在数百毫伏的范围内调谐夹断电压,并且这些电压至少在几个小时内保持稳定。应用我们的方法,我们可以使线性排列的四个量子点中的柱塞门的夹断电压均匀化,从而将夹断电压的分散度降低一个数量级。这项工作为量子点器件的调谐提供了一种新工具,并为可扩展自旋量子比特阵列的实现提供了新的视角。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/6106/10103318/a15a0cea4ef4/nl2c04446_0001.jpg

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