Rana Anchal, Yadav Aditya, Gupta Govind, Rana Abhimanyu
Centre for Advanced Materials and Devices, School of Engineering and Technology, BML Munjal University Sidhrawali Gurugram-122413 Haryana India
CSIR-National Physical Laboratory K. S. Krishnan Marg New Delhi 110012 India.
RSC Adv. 2023 May 22;13(22):15334-15341. doi: 10.1039/d3ra00752a. eCollection 2023 May 15.
We report an infrared (IR) sensitive mixed phase of VO and VO thin films, grown by cathodic vacuum arc-deposition on glass substrates at relatively low temperatures. We have found that the mixed phase of VO and VO can be stabilized by post-annealing of amorphous VO between 300-400 °C, which gets fully converted into VO after annealing at higher temperatures ∼450 °C. The local conversion from VO to VO has also been demonstrated by applying different laser powers in Raman spectroscopy measurements. The optical transmission of these films increases as the content of VO increases but the electrical conductivity and the optical bandgap decrease. These results are explained by the role of defects (oxygen vacancies) through the photoluminescence (PL) and time-resolved photoluminescence (TRPL) measurements. The IR sensitivity of the mixed phase is explained by the plasmonic absorption by the VO degenerate semiconductor.
我们报道了一种通过阴极真空电弧沉积在相对低温的玻璃基板上生长的VO和VO薄膜的红外（IR）敏感混合相。我们发现，VO和VO的混合相可以通过在300 - 400°C之间对非晶VO进行后退火来稳定，在约450°C的较高温度退火后，其会完全转变为VO。通过在拉曼光谱测量中施加不同的激光功率，也证明了从VO到VO的局部转变。这些薄膜的光透射率随着VO含量的增加而增加，但电导率和光学带隙减小。通过光致发光（PL）和时间分辨光致发光（TRPL）测量，利用缺陷（氧空位）的作用解释了这些结果。混合相的红外敏感性由VO简并半导体的等离子体吸收来解释。
